Microwave characteristics of high fmax low noise thin film silicon-on-sapphire MOSFETs

IEEE International SOI Conference

Volumn , Issue , 1995, Pages 18-19

  Johnson, R A ^a   Chang, C E ^a   de la Houssaye, P R ^a   Garcia, G A ^a   Lagnado, I ^a   Asbeck, P M ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC NETWORK ANALYZERS; GATES (TRANSISTOR); MESFET DEVICES; MICROWAVE CIRCUITS; MOS DEVICES; MOSFET DEVICES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; THERMAL CONDUCTIVITY; THIN FILMS; TRANSCONDUCTANCE;

HOT ELECTRON EFFECTS; MAXIMUM AVAILABLE GAIN; MAXIMUM STABLE GAIN; SHORT CHANNEL THRESHOLD VOLTAGE STABILITY;

SILICON ON SAPPHIRE TECHNOLOGY;

EID: 0029503522     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (0)