Quantitative measurement of interface fracture energy in multi-layer thin film structures

Materials Research Society Symposium - Proceedings

Volumn 391, Issue , 1995, Pages 91-96

  Ma, Qing ^a   Fujimoto, Harry ^a   Flinn, Paul ^a   Jain, Vivek ^a   Adibi Rizi, Farshid ^a   Moghadam, Farhad ^a   Dauskardt, Reinhold H ^a  

^a INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BENDING (DEFORMATION); BOND STRENGTH (MATERIALS); CRACK PROPAGATION; FRACTURE; INTERFACES (MATERIALS); INTERFACIAL ENERGY; MULTILAYERS; SILICA; STRUCTURE (COMPOSITION); SUBSTRATES; TITANIUM NITRIDE; TRANSMISSION ELECTRON MICROSCOPY; FRACTURE ENERGY; MICROELECTRONICS; SANDWICH STRUCTURES; SILICON OXIDES;

FOUR POINT BENDING METHOD; INTERFACE ADHESION STRENGTH; INTERFACIAL DEBONDING; STRAIN ENERGY RELEASE RATE; TEMPERATURE PROCESSING; FOUR-POINT BENDING METHOD; FOUR-POINT BENDING TECHNIQUE; INTERFACE ADHESION; INTERFACE FRACTURE ENERGY; MULTI-LAYER THIN FILM; QUANTITATIVE MEASUREMENT; THIN-FILM STRUCTURE;

THIN FILMS;

EID: 0029502626     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-391-91     Document Type: Conference Paper

References (7)