|
|
Volumn 377, Issue , 1995, Pages 455-466
|
|
Spin-dependent recombination effects in a-Si:H pin solar cell devices: a new characterization technique
|
|
Author keywords
[No Author keywords available]
|
|
Indexed keywords
AMORPHOUS SILICON;
CALCULATIONS;
DEFECTS;
ELECTRIC CONDUCTIVITY;
ELECTRIC CURRENT MEASUREMENT;
ELECTRIC CURRENTS;
ELECTROMAGNETIC WAVE ABSORPTION;
HYDROGEN;
MAGNETIC RESONANCE;
SEMICONDUCTOR DEVICE MODELS;
SEMICONDUCTOR DEVICES;
VOLTAGE MEASUREMENT;
DEFECT DENSITY;
ELECTRICALLY DETECTED MAGNETIC RESONANCE;
HYDROGENATED AMORPHOUS SILICON PIN SOLAR CELL DEVICES;
MICROWAVE ABSORPTION;
PARAMAGNETIC STATES;
SPIN DEPENDENT PHOTOCONDUCTIVITY;
SPIN DEPENDENT RECOMBINATION EFFECTS;
SILICON SOLAR CELLS;
|
|
EID: 0029493029
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1557/proc-377-455 Document Type: Conference Paper |
|
Times cited : (14)
|
|
References (14)
|
