Quantum-wire effects in thin and narrow SOI MOSFETs

IEEE International SOI Conference

Volumn , Issue , 1995, Pages 66-67

  Baie, X ^a   Colinge, J P ^a   Bayot, V ^a   Grivei, E ^a  

^a UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ANNEALING; CARRIER CONCENTRATION; COMPUTER SIMULATION; ELECTRONIC DENSITY OF STATES; FERMI LEVEL; FINITE ELEMENT METHOD; ION IMPLANTATION; QUANTUM THEORY; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR QUANTUM WIRES; SILICON ON INSULATOR TECHNOLOGY;

CONDUCTANCE OSCILLATIONS; CURRENT DRAIN FLUCTUATION; ENERGY SUBBANDS; GATE VOLTAGE; METALLIZATION; POLYSILIUM; QUANTUM WIRE EFFECTS; WAVE FUNCTIONS;

MOSFET DEVICES;

EID: 0029492929     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (1)