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Volumn 42, Issue 6, 1995, Pages 2066-2073

Radiation Hardness of pn-CCDs for X-ray Astronomy

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE COUPLED DEVICES; CHARGE TRANSFER; PROTONS; RADIATION DETECTORS; RADIATION EFFECTS; SATELLITES; SPACECRAFT INSTRUMENTS; THERMAL EFFECTS; X RAY SPECTROSCOPY;

EID: 0029492480     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.489254     Document Type: Article
Times cited : (10)

References (17)
  • 1
    • 0025399888 scopus 로고
    • The MPI-AIT X-Ray Imager (MAXI) - High Speed pn CCDs for X-ray Detection
    • L. Strüder et al., “The MPI-AIT X-Ray Imager (MAXI) - High Speed pn CCDs for X-ray Detection”, Nucl. Instr. and Meth. A288, pp.227, 1990
    • (1990) Nucl. Instr. and Meth. , vol.A288 , pp. 227
    • Strüder, L.1
  • 2
    • 25344442387 scopus 로고
    • The XMM pn-CCD Detector System
    • H. Bräuninger et al., N. Meidinger, “The XMM pn-CCD Detector System”, ESA SP-356, pp.69, 1992
    • (1992) ESA , vol.SP-356 , pp. 69
    • Bräuninger, H.1    Meidinger, N.2
  • 3
    • 0027556718 scopus 로고
    • First results with the pn-CCD detector system for the XMM satellite mission
    • H. Bräuninger et al., N. Meidinger, “First results with the pn-CCD detector system for the XMM satellite mission”, Nucl. Instr. and Meth. A326, pp.129, 1993
    • (1993) Nucl. Instr. and Meth. , vol.A326 , pp. 129
    • Bräuninger, H.1    Meidinger, N.2
  • 5
    • 0027557856 scopus 로고
    • The effect of bulk traps in proton irradiated EEV CCDs
    • A.D. Holland, “The effect of bulk traps in proton irradiated EEV CCDs”, Nucl. Instr. and Meth. A326, pp. 335, 1993.
    • (1993) Nucl. Instr. and Meth. , vol.A326 , pp. 335
    • Holland, A.D.1
  • 10
    • 0020169807 scopus 로고
    • Defect production and lifetime control in electron and γ-irradiated silicon
    • S.D. Brotherton, P. Bradley, “Defect production and lifetime control in electron and γ-irradiated silicon”, J. Appl. Phys., Vol.53, No.8, pp.5720, 1982
    • (1982) J. Appl. Phys. , vol.53 , Issue.8 , pp. 5720
    • Brotherton, S.D.1    Bradley, P.2
  • 11
    • 0026152433 scopus 로고
    • A Model for Charge Transfer in buried Charge Coupled Devices at Low Temperature
    • E. Banghart et al., “A Model for Charge Transfer in buried Charge Coupled Devices at Low Temperature”, IEEE Transactions on Electron Devices, Vol.38, No.5, p.1165, 1991
    • (1991) IEEE Transactions on Electron Devices , vol.38 , Issue.5 , pp. 1165
    • Banghart, E.1
  • 12
    • 0016128631 scopus 로고
    • The Effects of Bulk Traps on the Performance of Bulk Channel Charge-Coupled Devices
    • A. Mohsen, M. Tompsett, “The Effects of Bulk Traps on the Performance of Bulk Channel Charge-Coupled Devices”, IEEE Transactions on Electron Devices, Vol.21, No.11, pp.701, 1974
    • (1974) IEEE Transactions on Electron Devices , vol.21 , Issue.11 , pp. 701
    • Mohsen, A.1    Tompsett, M.2
  • 15
    • 0001759991 scopus 로고
    • Properties of 1.0MeV-Electron-Irradiated Defect Centers in silicon
    • J.W. Walker and C.T. Sah, “Properties of 1.0MeV-Electron-Irradiated Defect Centers in silicon”, Physical Review B, Vol. 7, No. 10, pp.4587, 1973
    • (1973) Physical Review B , vol.7 , Issue.10 , pp. 4587
    • Walker, J.W.1    Sah, C.T.2
  • 17
    • 36549093309 scopus 로고
    • Determination of oxygen in silicon by ratio of A center to E center
    • Z. Su, A. Husain, J.W. Farmer, “Determination of oxygen in silicon by ratio of A center to E center”, J. Appl. Phys. 67 (4), pp.1903, 1989
    • (1989) J. Appl. Phys. , vol.67 , Issue.4 , pp. 1903
    • Su, Z.1    Husain, A.2    Farmer, J.W.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.