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Volumn 42, Issue 6, 1995, Pages 2074-2081

Further Measurements of Random Telegraph Signals in Proton Irradiated CCDs

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON EMISSION; ELECTRON ENERGY LEVELS; MATHEMATICAL MODELS; PROBABILITY; PROTONS; RADIATION EFFECTS; SIGNAL PROCESSING; TELEGRAPH;

EID: 0029492479     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.489255     Document Type: Article
Times cited : (81)

References (25)
  • 1
    • 0012278046 scopus 로고
    • Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/f) noise
    • (1989)
    • M. J. Kirton and M. J. Uren, “Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/f) noise” Advances in Physics, 1989, Vol. 38, No. 4, pp 367–468 (1989).
    • (1989) Advances in Physics , vol.38 , Issue.4 , pp. 367-468
    • Kirton, M.J.1    Uren, M.J.2
  • 2
    • 0028547755 scopus 로고
    • Random telegraph signal currents and low-frequency noise in junction field effect transistors
    • K. Kandiah, “Random telegraph signal currents and low-frequency noise in junction field effect transistors”, IEEE Trans. on Electron Devices, vol. ED-41(11), pp. 2006–2015 (1994)
    • (1994) IEEE Trans. on Electron Devices , vol.ED-41 , Issue.11 , pp. 2006-2015
    • Kandiah, K.1
  • 3
    • 0642341219 scopus 로고
    • Random Telegraph Signals in Silicon-on-insulator Metal-oxide-semiconductor transistors
    • E. Simoen and C. Claeys, “Random Telegraph Signals in Silicon-on-insulator Metal-oxide-semiconductor transistors”, J. Appl. Phys., vol. 75(7), pp 3647–3652, (1994)
    • (1994) J. Appl. Phys. , vol.75 , Issue.7 , pp. 3647-3652
    • Simoen, E.1    Claeys, C.2
  • 4
    • 0001550029 scopus 로고
    • Discrete conductance fluctuations in silicon emitter junctions due to defect clustering and evidence for structural changes by high-energy electron irradiation and annealing
    • G. I. Andersson, M. A. Andersson and O. Engstrom, “Discrete conductance fluctuations in silicon emitter junctions due to defect clustering and evidence for structural changes by high-energy electron irradiation and annealing”, J. Appl. Phys., vol. 72(7), pp 2680–2691 (1992)
    • (1992) J. Appl. Phys. , vol.72 , Issue.7 , pp. 2680-2691
    • Andersson, G.I.1    Andersson, M.A.2    Engstrom, O.3
  • 6
    • 0029306752 scopus 로고
    • Identification of Individual Bistable Defects in Avalanche Photodiodes
    • F. Buchinger, A Kyle, J. K. P. Lee, C. Webb and H. Dautet, “Identification of Individual Bistable Defects in Avalanche Photodiodes”, Appl. Phys. Lett. vol. 66(18), pp 2367–2369, (1995)
    • (1995) Appl. Phys. Lett. , vol.66 , Issue.18 , pp. 2367-2369
    • Buchinger, F.1    Kyle, A.2    Lee, J.K.P.3    Webb, C.4    Dautet, H.5
  • 7
    • 44049113002 scopus 로고
    • Real-Time Monitoring of Single-Neutron-Induced Damage in Silicon using Avalanche Photodiodes Operating in the Geiger Mode
    • F. Buchinger, H. Dautet, J. K. P. Lee, R. J. McIntyre and M. Orchard-Webb, “Real-Time Monitoring of Single-Neutron-Induced Damage in Silicon using Avalanche Photodiodes Operating in the Geiger Mode”, Nuclear Instruments and Methods, vol. B72, pp496–498, (1992)
    • (1992) Nuclear Instruments and Methods , vol.B72 , pp. 496-498
    • Buchinger, F.1    Dautet, H.2    Lee, J.K.P.3    McIntyre, R.J.4    Orchard-Webb, M.5
  • 8
    • 0029230490 scopus 로고
    • Study of RTS Noise and Excess Currents in Lattice-mismatched InP/InGaAs/InP Photodetector Arrays
    • D. Pogany, S. Ababou, G. Guillot, X. Hugon, B. Vilotitich and C. Lenoble, “Study of RTS Noise and Excess Currents in Lattice-mismatched InP/InGaAs/InP Photodetector Arrays”, Solid State Electronics, vol. 38(1), pp37–49 (1995)
    • (1995) Solid State Electronics , vol.38 , Issue.1 , pp. 37-49
    • Pogany, D.1    Ababou, S.2    Guillot, G.3    Hugon, X.4    Vilotitich, B.5    Lenoble, C.6
  • 9
    • 0027841912 scopus 로고
    • Random Telegraph Signals from Proton-Irradiated CCDs
    • I. H. Hopkins and G. R. Hopkinson, “Random Telegraph Signals from Proton-Irradiated CCDs”, IEEE Trans on Nuclear Science, vol. NS-40(6), pp 1567–1574, (1993)
    • (1993) IEEE Trans on Nuclear Science , vol.NS-40 , Issue.6 , pp. 1567-1574
    • Hopkins, I.H.1    Hopkinson, G.R.2
  • 11
    • 0022867939 scopus 로고
    • Permanent damage produced by single proton interactions in silicon devices
    • J. R. Srour, R. A. Hartmann and K. S. Kitazaki, “Permanent damage produced by single proton interactions in silicon devices”, IEEE Trans on Nuclear Science, vol. NS-33(6), pp. 1597–1604 (1986)
    • (1986) IEEE Trans on Nuclear Science , vol.NS-33 , Issue.6 , pp. 1597-1604
    • Srour, J.R.1    Hartmann, R.A.2    Kitazaki, K.S.3
  • 13
    • 0025596382 scopus 로고
    • Particle-Induced Dark Current Fluctuations in Focal Plane Arrays
    • C. J. Dale, P. W. Marshall and E. A. Burke, “Particle-Induced Dark Current Fluctuations in Focal Plane Arrays” IEEE Trans on Nuclear Science, vol. NS-37(6), pp. 1784–1791 (1990)
    • (1990) IEEE Trans on Nuclear Science , vol.NS-37 , Issue.6 , pp. 1784-1791
    • Dale, C.J.1    Marshall, P.W.2    Burke, E.A.3
  • 14
    • 0024915865 scopus 로고
    • Enhanced displacement damage effectiveness in irradiated silicon devices
    • J. R. Srour and R. A. Hartmann, “Enhanced displacement damage effectiveness in irradiated silicon devices”, IEEE Trans on Nuclear Science, vol. NS-36(6), pp. 1825–1830 (1989)
    • (1989) IEEE Trans on Nuclear Science , vol.NS-36 , Issue.6 , pp. 1825-1830
    • Srour, J.R.1    Hartmann, R.A.2
  • 15
    • 0026152433 scopus 로고
    • A model for charge transfer in buried channel charge-coupled devices at low temperature
    • E. K. Banghart, J. P. Lavine, E. A. Trabka, E. T. Nelson and B. C. Burkey, “A model for charge transfer in buried channel charge-coupled devices at low temperature, IEEE Trans. on Electron Devices, vol. ED-38(3), pp. 1162–1174 (1991)
    • (1991) IEEE Trans. on Electron Devices , vol.ED-38 , Issue.3 , pp. 1162-1174
    • Banghart, E.K.1    Lavine, J.P.2    Trabka, E.A.3    Nelson, E.T.4    Burkey, B.C.5
  • 17
    • 0019708359 scopus 로고
    • Electric field enhanced emission from non-coulombic traps in semiconductors
    • P. A. Martin, B. G. Streetman, and K. Hess, “Electric field enhanced emission from non-coulombic traps in semiconductors”, J. Appl. Phys, 52 (12), pp. 7409–7415 (1981)
    • (1981) J. Appl. Phys , vol.52 , Issue.12 , pp. 7409-7415
    • Martin, P.A.1    Streetman, B.G.2    Hess, K.3
  • 18
    • 0025669255 scopus 로고
    • Proton-Induced Displacement Damage Distributions in Silicon Microvolumes
    • P. W. Marshall, C. J. Dale and E. A. Burke, “Proton-Induced Displacement Damage Distributions in Silicon Microvolumes”, IEEE Trans on Nuclear Science, vol. NS-37(6), pp. 1776–1783 (1990)
    • (1990) IEEE Trans on Nuclear Science , vol.NS-37 , Issue.6 , pp. 1776-1783
    • Marshall, P.W.1    Dale, C.J.2    Burke, E.A.3
  • 20
    • 0028697655 scopus 로고
    • Dark current induced in large CCD arrays by proton-induced elastic reactions and single to multiple-even spallation reactions
    • L. Chen, P. J. McNulty, S. Larson, D. A. Thompson, T. L. Miller and T Lee, “Dark current induced in large CCD arrays by proton-induced elastic reactions and single to multiple-even spallation reactions”, IEEE Trans on Nuclear Science, NS-41(6), pp. 1992–1998 (1994)
    • (1994) IEEE Trans on Nuclear Science , vol.NS-41 , Issue.6 , pp. 1992-1998
    • Chen, L.1    McNulty, P.J.2    Larson, S.3    Thompson, D.A.4    Miller, T.L.5    Lee, T.6
  • 21
    • 0028711773 scopus 로고
    • A comparison of Monte Carlo and analytical treatments of displacement damage in Si microvolumes
    • C. J. Dale, L. Chen, P. J. McNulty, P. W. Marshall and E. A. Burke, “A comparison of Monte Carlo and analytical treatments of displacement damage in Si microvolumes”, IEEE Trans on Nuclear Science, vol. NS-41(6), pp 1974–1983 (1994)
    • (1994) IEEE Trans on Nuclear Science , vol.NS-41 , Issue.6 , pp. 1974-1983
    • Dale, C.J.1    Chen, L.2    McNulty, P.J.3    Marshall, P.W.4    Burke, E.A.5
  • 23
    • 0006760104 scopus 로고
    • Forward bias induced annealing of the E center in silicon
    • G. E. Barnes and G. A. Samara, “Forward bias induced annealing of the E center in silicon”, Appl. Phys. Lett., 48 (14), pp. 934–936 (1986)
    • (1986) Appl. Phys. Lett. , vol.48 , Issue.14 , pp. 934-936
    • Barnes, G.E.1    Samara, G.A.2
  • 24
    • 36149016389 scopus 로고
    • Defects in irradiated silicon: electron paramagnetic resonance and electron-nuclear double resonance of the Si-E center
    • G. D. Watkins and J. W. Corbett, “Defects in irradiated silicon: electron paramagnetic resonance and electron-nuclear double resonance of the Si-E center”, Phys. Rev., 134 (5A), pp. 1359–1377 (1964)
    • (1964) Phys. Rev. , vol.134 , Issue.5 A , pp. 1359-1377
    • Watkins, G.D.1    Corbett, J.W.2
  • 25
    • 85069357792 scopus 로고
    • Electronic stimulation of defect processes in semiconductors
    • No. 46: Ch. 1
    • L. C. Kimerling, “Electronic stimulation of defect processes in semiconductors”, Inst. Phys. Conf. Ser., No. 46: Ch. 1. pp. 56–73 (1979)
    • (1979) Inst. Phys. Conf. Ser. , pp. 56-73
    • Kimerling, L.C.1


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