Silicon film thickness and material dependence of 'reverse short channel effect' for SOI NMOSFETs

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1995, Pages 533-536

  Rajgopal, Rajan ^a   Schiebel, Richard ^a   Iyer, S Sundar Kumer ^a   Joyner, Keith ^a   Houston, Theodore W ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; GATES (TRANSISTOR); ION IMPLANTATION; SEMICONDUCTING BORON; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SILICON ON INSULATOR TECHNOLOGY;

BORON PILE UP; MODERATELY DOPED DRAIN; REVERSE SHORT CHANNEL EFFECT; SILICON FILM THICKNESS; SOURCE DRAIN MODEL; SURFACE CONCENTRATION;

MOSFET DEVICES;

EID: 0029491758     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)