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Volumn , Issue , 1995, Pages 122-124
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SOI DRAM: its features and possibility
a
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Author keywords
[No Author keywords available]
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Indexed keywords
BACK GATE BIAS EFFECTS;
BURIED OXIDE;
CAPACITIVE COUPLING;
DATA RETENTION CHARACTERISTICS;
DYNAMIC RANDOM ACCESS MEMORY;
FLOATING SUBSTRATE EFFECTS;
JUNCTION CAPACITANCE;
PARASITIC BIPOLAR EFFECT;
SOFT ERROR EFFECT;
CALCULATIONS;
CAPACITANCE;
CAPACITORS;
DATA PROCESSING;
ELECTRIC VARIABLES MEASUREMENT;
LEAKAGE CURRENTS;
OXIDES;
RANDOM ACCESS STORAGE;
SEMICONDUCTOR DEVICE MODELS;
SEMICONDUCTOR DEVICE STRUCTURES;
SEMICONDUCTOR JUNCTIONS;
SILICON ON INSULATOR TECHNOLOGY;
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EID: 0029491026
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
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Times cited : (5)
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References (5)
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