Stress profile characterization and test structures analysis of single and double ion implanted LPCVD polycrystalline silicon

International Conference on Solid-State Sensors and Actuators, and Eurosensors IX, Proceedings

Volumn 2, Issue , 1995, Pages 88-91

  Benitez, M A ^a   Esteve, J ^a   Benrakkad, M S ^a   Morante, J R ^a   Samitier, J ^a   Schweitz, J A ^a  

^a INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; FABRICATION; ION IMPLANTATION; MICROMACHINING; OXIDATION; POLYCRYSTALLINE MATERIALS; RAMAN SPECTROSCOPY; RESIDUAL STRESSES; SEMICONDUCTOR DOPING; SILICON WAFERS; SURFACES;

LOW PRESSURE CHEMICAL VAPOR DEPOSITION; MICRO RAMAN SPECTROSCOPY; POLYSILICON; STRESS GRADIENT; STRESS PROFILE CHARACTERIZATION; SURFACE MICROMACHINING; TEST STRUCTURES ANALYSIS; THERMAL OXIDE;

SEMICONDUCTING SILICON;

EID: 0029489921     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)