Silicon fusion bonding and deep reactive ion etching; a new technology for microstructures

International Conference on Solid-State Sensors and Actuators, and Eurosensors IX, Proceedings

Volumn 1, Issue , 1995, Pages 556-559

  Klaassen, Erno H ^a   Petersen, Kurt ^a   Noworolski, J Mark ^a   Logan, John ^a   Maluf, Nadim I ^a   Brown, Joe ^a   Storment, Christopher ^a   McCulley, Wendell ^a   Kovacs, Gregory T A ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ASPECT RATIO; BONDING; DEPOSITION; GROWTH (MATERIALS); MICROMACHINING; REACTIVE ION ETCHING; SILICON; SINGLE CRYSTALS; SUBSTRATES; SURFACES; THIN FILMS;

DEEP REACTIVE ION ETCHING; SILICON FUSION BONDING; THERMAL OXIDE;

MICROELECTROMECHANICAL DEVICES;

EID: 0029489901     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)