New ultra-high-frequency plasma source for large-scale etching processes

Japanese Journal of Applied Physics

Volumn 34, Issue 12, 1995, Pages 6805-6808

  Samukawa, Seiji ^a   Nakagawa, Yukito ^b   Tsukada, Tsutomu ^b   Ueyama, Hiroyuki ^c   Shinohara, Kibatsu ^c  

^a NEC CORPORATION   (Japan)

^b Canon ANELVA Technix Corporation   (Japan)

^c Nihon Koshuha Co Ltd   (Japan)

Author keywords

High density plasma; Large scale plasma source; Low electron temperature; Ultra high frequency discharge

Indexed keywords

ANTENNAS; ARGON; CHLORINE; ELECTRIC DISCHARGES; ELECTRONS; PLASMA DENSITY; PLASMA ETCHING; PLASMA SOURCES; SILICON; TEMPERATURE;

HIGH DENSITY PLASMAS; LOW ELECTRON TEMPERATURE; PLASMA DISCHARGE; SPOKEWISE ANTENNA; ULTRAHIGH FREQUENCY DISCHARGE;

PLASMAS;

EID: 0029488190     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.34.6805     Document Type: Article

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