Physically-based MOS transistor avalanche breakdown model

IEEE Transactions on Electron Devices

Volumn 42, Issue 12, 1995, Pages 2197-2202

  Wong, Hei ^a  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; GATES (TRANSISTOR); IONIZATION OF SOLIDS; MATHEMATICAL MODELS;

AVALANCHE BREAKDOWN MODEL; DRAIN AVALANCHE BREAKDOWN; DRAIN SATURATION CURRENT; DRAIN SATURATION VOLTAGE; IMPACT IONIZATION; PINCH OFF REGION;

MOSFET DEVICES;

EID: 0029487295     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.477779     Document Type: Article

References (17)