Low cost millimeter-wave monolithic integrated circuits using direct ion implanted GaAs MESFETs

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 1995, Pages 207-209

  Feng, M ^a   Scherrer, D R ^a   Apostolakis, P J ^a   Middleton, J R ^a   McPartlin, M J ^a   Lauterwasser, B D ^a   Oliver Jr , J D ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC POWER SUPPLIES TO APPARATUS; HIGH ELECTRON MOBILITY TRANSISTORS; ION IMPLANTATION; LIGHT AMPLIFIERS; MONOLITHIC INTEGRATED CIRCUITS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON NITRIDE; TRANSCONDUCTANCE;

CUT OFF FREQUENCY; ELECTRON BEAM DIRECT WRITE TECHNIQUE; EXTRAPOLATION; LOW NOISE AMPLIFIERS; MILLIMETER WAVE MONOLITHIC INTEGRATED CIRCUITS; TANTALUM NITRIDE;

MESFET DEVICES;

EID: 0029484837     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)