Effect of the nitrogen partial pressure on the preferred orientation of TiN thin films

Journal of Materials Science Letters

Volumn 14, Issue 23, 1995, Pages 1635-1637

  Yang, H H ^a   Je, J H ^a   Lee, K B ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CRYSTAL ORIENTATION; FILM GROWTH; INTERFACIAL ENERGY; ION BOMBARDMENT; MAGNETRON SPUTTERING; NITROGEN; SPUTTER DEPOSITION; STRAIN; STRESSES; TITANIUM NITRIDE; X RAY DIFFRACTION;

BENDING BEAM METHOD; HIGH ENERGY BOMBARDING PARTICLES; NITROGEN PARTIAL PRESSURE; RADIO FREQUENCY MAGNETRON SPUTTERING; STRAIN ENERGY; THRESHOLD THICKNESS; TITANIUM NITRIDE THIN FILMS; X RAY REFLECTIVITY;

THIN FILMS;

EID: 0029484640     PISSN: 02618028     EISSN: 15734811     Source Type: Journal    
DOI: 10.1007/BF00422660     Document Type: Article

References (8)

1. Collection and sputtering experiments with noble gas ions
2. Intrinsic stress in sputtered thin films