SiGe devices and circuits: where are advantages over III/V?

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 1995, Pages 14-17

  Koenig, U ^a   Gruhle, A ^a   Schueppen, A ^a  

^a DAIMLER AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; FREQUENCIES; HETEROJUNCTION BIPOLAR TRANSISTORS; HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATED CIRCUIT MANUFACTURE; MOLECULAR BEAM EPITAXY; PASSIVATION; SEMICONDUCTING SILICON; SILICA;

COPLANAR OSCILLATORS; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; MICROSTRIP OSCILLATORS; MONOLITHICALLY INTEGRATED WIDE BAND AMPLIFIER; RING OSCILLATORS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0029484565     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (64)