Channel doping engineering of MOSFET with adaptable threshold voltage using body effect for low voltage and low power applications

International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Volumn , Issue , 1995, Pages 159-163

  Clement Wann, H ^a   Hu, Chenming ^a   Noda, Kenji ^a   Sinitsky, Dennis ^a   Assaderaghi, Fariborz ^a   Bokor, Jeff ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC DELAY LINES; ELECTRODES; GATES (TRANSISTOR); LEAKAGE CURRENTS; PERFORMANCE; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY; SWITCHING; VLSI CIRCUITS;

ADAPTABLE THRESHOLD VOLTAGE; BODY EFFECT; BODY TO SOURCE JUNCTION; CHANNEL DOPING ENGINEERING; FORWARD BIASING; POWER SUPPLY VOLTAGE; VOLTAGE REDUCTION;

MOSFET DEVICES;

EID: 0029484356     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)