Mid-wave infrared diode lasers based on GaInSb/InAs and InAs/AlSb superlattices

Applied Physics Letters

Volumn 67, Issue , 1995, Pages 3700-

  Chow, D H ^a   Miles, R H ^a   Hasenberg, T C ^a   Kost, A R ^a   Zhang, Y H ^a   Dunlap, H L ^a   West, L ^a  

^a Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INFRARED DEVICES; LIGHT EMISSION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR SUPERLATTICES; SUBSTRATES;

AUGER RECOMBINATION; CLADDING LAYERS; MID-WAVE INFRARED DIODE LASERS; WAVELENGTHS;

SEMICONDUCTOR LASERS;

EID: 0029483778     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.115354     Document Type: Article

References (12)