The metal organic vapour phase epitaxy of ZnTe: II. Analysis of growth conditions

Progress in Crystal Growth and Characterization of Materials

Volumn 31, Issue 1-2, 1995, Pages 45-117

  Kuhn, W S ^a   Qu'Hen, B ^a   Gorochov, O ^a   Triboulet, R ^a   Gebhardt, W ^b  

^a CNRS   (France)

^b UNIVERSITY OF REGENSBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL REACTORS; COMPUTER SIMULATION; DISSOCIATION; GEOMETRY; HYDRODYNAMICS; MASS TRANSFER; METALLORGANIC VAPOR PHASE EPITAXY; NUCLEATION; PRESSURE; REACTION KINETICS; SEMICONDUCTOR GROWTH; TEMPERATURE;

DIETHYL ZINC; DIISOPROPYL TELLURIDE; DIMETHYLZINC TRIETHYLAMIN; METHYLALLYL TELLURIDE; REACTION BOUNDARY LAYER MODEL; REACTOR CELL; SEMICONDUCTING ZINC TELLURIDE; TEALKYLS DIETHYLTELLURIDE;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0029479909     PISSN: 09608974     EISSN: None     Source Type: Journal    
DOI: 10.1016/0960-8974(95)00017-8     Document Type: Article

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