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Volumn 96, Issue 11, 1995, Pages 871-875

Epitaxy driven fractal growth

Author keywords

A. semiconductors, metals, surfaces and interfaces; B. epitaxy

Indexed keywords

AGGLOMERATION; ANNEALING; DIFFUSION IN SOLIDS; FILM PREPARATION; FRACTALS; GOLD; INTERFACES (MATERIALS); MATHEMATICAL MODELS; SEMICONDUCTING SILICON COMPOUNDS; SILICA; THIN FILMS;

EID: 0029475075     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1098(95)80105-7     Document Type: Article
Times cited : (17)

References (37)
  • 19
    • 0000271464 scopus 로고
    • Diffusion-controlled cluster formation in two, three, and four dimensions
    • (1983) Physical Review A , vol.27 A , pp. 604
    • Peakin1
  • 20
    • 29444445446 scopus 로고
    • Diffusion-controlled cluster formation in 2—6-dimensional space
    • (1983) Physical Review A , vol.27 A , pp. 1495
    • Peakin1
  • 34
    • 0025519756 scopus 로고
    • Au and Si undergo a eutectic reaction at 19 atomic % silicon at 363°C, and references therein
    • (1990) Solid State Commun. , vol.76 , pp. 773
    • Johnson1
  • 36
    • 84919256427 scopus 로고    scopus 로고
    • The trapezoidal islands should be aligned along three equivalent [110] directions on a Si(111) surface. In the present case, our sample surface was 4° off from the (111) plane. Such vicinal surfaces show directed epitaxial growth on them because of the presence of directed surface steps. For detaills see Ref. 29.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.