Ab initio calculations of structural and electronic properties of 15R SiC

Solid State Communications

Volumn 96, Issue 11, 1995, Pages 887-891

  Wellenhofer, G ^a   Rossler U ^a  

^a UNIVERSITY OF REGENSBURG   (Germany)

Author keywords

A. semiconductors; C. crystal structure and symmetry; D. electronic band structure

Indexed keywords

APPROXIMATION THEORY; BAND STRUCTURE; CRYSTAL SYMMETRY; DISPERSION (WAVES); ELECTRONIC STRUCTURE; SEMICONDUCTING SILICON COMPOUNDS; TENSORS;

CONDUCTION BAND DISPERSION; DENSITY FUNCTIONAL THEORY; ELECTRONIC BAND DISPERSION;

SILICON CARBIDE;

EID: 0029475074     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1098(95)00519-6     Document Type: Article

References (30)

1. Inhomogeneous Electron Gas
2. Self-Consistent Equations Including Exchange and Correlation Effects
3. Energy Band Structure and Optical Properties of Wurtzite-Structure Silicon Carbide Crystals
4. Electronic properties of cubic and hexagonal SiC polytypes from ab initio calculations
5. Confirmation of an ANNNI-Like Model for Polytypism in SiC
6. Influence of atomic relaxations on the structural properties of SiC polytypes from ab initio calculations
7. Growth, Luminescence, Selection Rules, and Lattice Sums of SiC with Wurtzite Structure
8. The Conduction Bands in 6H and 15R Silicon Carbide. I. Hall Effect and Infrared Faraday Rotation Measurements
9. The Conduction Bands in 6H and 15R Silicon Carbide. II. Absorption Measurements
10. XXVIII. Elastoresistance and Magnetoresistance in Multivalley Semi-conductors with an Axis of Symmetry