Fast and slow border traps in MOS devices

Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS

Volumn , Issue , 1995, Pages 1-8

  Fleetwood, D M ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CAPACITORS; DEFECTS; ELECTRIC CHARGE; ELECTRIC CURRENTS; HYDROGEN; IONIZATION; MOSFET DEVICES; OXIDES; PARAMAGNETIC RESONANCE; SEMICONDUCTING SILICON;

CAPACITANCE VOLTAGE HYSTERESIS; HYDROGEN RELATED CENTERS; IONIZING RADIATION; MOS CAPACITORS; MOS ELECTRICAL RESPONSE; NEAR INTERFACIAL OXIDE TRAPS; RADIATION RESPONSE; RADIATION TRAPS; THERMALLY STIMULATED CURRENT;

RADIATION EFFECTS;

EID: 0029459365     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (55)