Peculiarities of recombination processes in injection lasers based on (In,Ga)As quantum dots leading to the single longitudinal mode operation at room temperature

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 2648, Issue , 1995, Pages 287-293

  Zaitsev, S V ^a   Gordeev, N Yu ^a   Soshnikov, M P ^a   Lunev, A V ^a   Egorov, A Yu ^a   Zhukov, A E ^a   Ustinov, V M ^a   Ledentsov, N N ^a   Kop'Ev, P S ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

Quantum dot array; Semiconductor injection lasers; Single mode operation

Indexed keywords

CARBON QUANTUM DOTS; GRAPHENE QUANTUM DOTS; INJECTION LASERS; NANOCRYSTALS; PUMPING (LASER); SEMICONDUCTOR QUANTUM DOTS; SOLID STATE LASERS; ELECTRIC CURRENTS; LASER MODES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DIODES;

BROAD-AREA LASER DIODE; LASER CHARACTERISTICS; NON-RADIATIVE RECOMBINATIONS; QUANTUM DOT ARRAYS; RECOMBINATION PROCESS; SINGLE LONGITUDINAL MODE OPERATION; SINGLE MODE OPERATION; THEORETICAL VALUES; INJECTION LASERS; RECOMBINATION PROCESSES; SINGLE MODE LASING; THRESHOLD CURRENTS;

QUANTUM DOT LASERS; SEMICONDUCTOR LASERS;

EID: 0029457203     PISSN: 0277786X     EISSN: 1996756X     Source Type: Conference Proceeding    
DOI: 10.1117/12.226182     Document Type: Conference Paper

References (9)

1. see for example: P. M. Petroff and S. P. DenBaars, "MBE and MOCVD growth and properties of self-assembling quantum dot arrays in III-V smiconductor structures", Superlat. Micro struct. 15(1), pp. 15-21 (1994).
2. J.-M. Gerard, J.-B. Jean, J. Lefebvre, J. M. Moison, N. Lebouche, and F. Barthe, "Optical investigation of the self-organized growth of InAs/GaAs quantum boxes", Workbook of 8-th Int. Conf. on MBE (Aug. 29 - Sept. 2, 1994), Osaka, Japan, pp. 381-382.
3. Y. Arakawa and H. Sakaki, "Multidimensional quantum well laser and temperature dependence of its threshold current", Appl. Phys. Lett. 40(11), pp. 939-941 (1982).
4. A. Yu. Egorov, A. E. Zhukov, P. S. Kop'ev, N. N. Ledentsov, M. V. Maksimov, and V. M. Ustinov, "The influence of growth conditions on the formation of (In, Ga) As quantum dots in GaAs matrix", Workbook of 8-th Int. Conf. on MBE (Aug. 29 - Sept. 2, 1994), Osaka, Japan, p. 385-386.
5. 0 injection laser emission from (JnGa) As quantum dots", Electron. Lett. 30(17), pp. 1416-1417 (1994).
6. D. Leonard, M. Krishnamurthy, C. M. Reaves, S. P. Denbaars, and P. M. Petroff, Appl. Phys. Lett., 63, p. 3203 (1993).
7. N. N. Ledentsov, V. M. Ustinov, A. Yu. Egorov, A. E. Zhukov, M. V. Maksimov, I. G. Tabatadze, P. S. Kopev, "Optical properties of InGaAs-GaAs quantum cluster heterostructures", Semiconductors 28(8), pp. 1483-1487 (1994)
8. A. Yu. Egorov, A. E. Zhukov, P. S. Kop'ev, N. N. Ledentsov, M. V. Maksimov, V. M. Ustinov, "The influence of growth conditions on the formation of (In, Ga) As quantum clusters in GaAs matrix", Semiconductors, 28(8), pp. 1439-1444 (1994)
9. Zh. I. Alferov, D. Z. Garbuzov, S. V. Zaitsev, A. B. Nivin, A. V. Ovchinnikov, I. S. Tarasov, Sov. Phys. Semicond., 5(5), pp. 824-829 (1987)