Microwave properties of traveling‐wave InGaAs/InGaAlAs quantum‐well optical waveguide modulators

Microwave and Optical Technology Letters

Volumn 10, Issue 4, 1995, Pages 204-207

  Mihailidi, M M ^a   Zucker, J E ^a   Feuer, M D ^a   Khan, M N ^a   Chang, T Y ^a   Sauer, N J ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

Electro optical modulators; quantum well devices; traveling wave modulators

Indexed keywords

BANDWIDTH; ELECTROOPTICAL DEVICES; FINITE DIFFERENCE METHOD; LAPLACE TRANSFORMS; LIGHT MODULATORS; MICROWAVES; MOLECULAR BEAM EPITAXY; REFRACTIVE INDEX; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM WELLS;

BARRIER RESERVOIR AND QUANTUM WELL ELECTRON TRANSFER; CHARACTERISTIC IMPEDANCE; ELECTROOPTICAL MODULATORS; MICROWAVE LOSS; MICROWAVE REFRACTIVE INDEX; ON-WAFER MEASUREMENTS; QUANTUM-WELL DEVICES; SOLID-SOURCE MOLECULAR BEAM EPITAXY; TRAVELLING WAVE MODULATORS;

OPTICAL WAVEGUIDES;

EID: 0029411832     PISSN: 08952477     EISSN: 10982760     Source Type: Journal    
DOI: 10.1002/mop.4650100404     Document Type: Article

References (8)

1. 40‐GHz Bandwidth InGaAs/InAlAs Multiple Quantum Well Opticl Intensity
2. High‐Speed III‐V Semiconductor Intensity Modulators
3. Design and Demonstration of Weighted‐Coupling Digital Y‐Branch Optical Switches in InGaAs/InGaAlAs Electron Transfer Waveguides
4. Waveguide Electrooptic Modulators
5. Analysis of a New Microwave Low‐Loss and Velocity Matched III‐V Transmission Line for Traveling Wave Electrooptic Modulators