Properties of the heterojunction between poly(dithienopyrrole)-poly(vinylchloride) composite and n-doped silicon

Synthetic Metals

Volumn 75, Issue 1, 1995, Pages 61-64

  Campos, M ^a   Camaioni, N ^b   Casalbore Miceli, G ^b   Geri, A ^b   Giro, G ^b   Zini, Q ^c  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

^b Istituto di Fotochimica e Radiazioni d'Alta Energia   (Italy)

^c CNR   (Italy)

Author keywords

Composites; Poly(dithienopyrrole); Poly(vinylchloride); Schottky junctions

Indexed keywords

CALCULATIONS; COMPOSITE MATERIALS; CONDUCTIVE PLASTICS; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC VARIABLES MEASUREMENT; POLYVINYL CHLORIDES; SEMICONDUCTING SILICON; THERMAL EFFECTS;

CAPACITANCE VOLTAGE MEASUREMENT; COMPOSITE INORGANIC CONTACT BARRIER; CONTACT BARRIER HEIGHT; POLYDITHIENOPYRROLE; SCHOTTKY JUNCTION; THERMIONIC EMISSION;

HETEROJUNCTIONS;

EID: 0029410531     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/0379-6779(95)03382-T     Document Type: Article

References (8)

1. Electrochemical fabrication of a polypyrrole?polythiophene p?n junction diode
2. Metal - Polyacetylene Schottky Barrier Diodes
3. Electrical characteristics of the junction between the poly(dithienothiophene-dithienopyrrole) conducting copolymer and silicon
4. Electropolymerization of Heterocycles on Poly(Vinylch1oride) Coated Electrodes
5. Thermal decomposition of o-azidobithienyls