Domain formation on the reconstructed GaAs(001) surface

Surface Science

Volumn 342, Issue 1-3, 1995, Pages 63-68

  Behrend, J ^a   Wassermeier, M ^a   Daweritz L ^a   Ploog, K H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

Gallium arsenide; Low index single crystal surfaces; Molecular beam epitaxy; Reflection high energy electron diffraction (RHEED); Scanning tunneling microscopy; Surface relaxation and reconstruction; Surface structure

Indexed keywords

ANNEALING; ARSENIC; GALLIUM; MOLECULAR BEAM EPITAXY; MULTILAYERS; PHASE DIAGRAMS; PHASE TRANSITIONS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SURFACE STRUCTURE; VACUUM APPLICATIONS;

DOMAIN STRUCTURE; SURFACE RECONSTRUCTION; ULTRAHIGH VACUUM CONDITIONS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0029409844     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(95)00762-8     Document Type: Article

References (20)

1. Reconstruction and defect structure of vicinal GaAs(001) and AlxGa1−xAs(001) surfaces during MBE growth
2. Optical spectroscopy of (001) GaAs and AlAs under molecular-beam epitaxy growth conditions