Influence of Mirror Reflectivity on Laser Performance of Very-Low-Threshold Vertical-Cavity Surface-Emitting Lasers

IEEE Photonics Technology Letters

Volumn 7, Issue 11, 1995, Pages 1228-1230

  Yang, Gye Mo ^a   MacDougal, Michael H ^a   Pudikov, Vasily ^a   Dapkus, P Daniel ^a  

^a UNIVERSITY OF SOUTHERN CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ETCHING; MIRRORS; OPTICAL PROPERTIES; OXIDATION; PHOTORESISTS; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS;

INTERNAL ROUND TRIP LOSS; LASER LIGHT CURRENT CHARACTERISTICS; MIRROR REFLECTIVITY; SELECTIVE OXIDATION; SLOPE EFFICIENCY; THRESHOLD CURRENT; VERTICAL CAVITY SURFACE EMITTING LASERS;

SEMICONDUCTOR LASERS;

EID: 0029409491     PISSN: 10411135     EISSN: 19410174     Source Type: Journal    
DOI: 10.1109/68.473454     Document Type: Article

References (12)

1. D. L. Huffaker, J. Shin, and D. G. Deppe, “Low threshold half-wave vertical-cavity lasers,” Electron. Lett., vol. 30, no. 23, pp. 1946–1947, 1994.
2. K. L. Lear, K. D. Choquette, R. P. Schneider, Jr., S. P. Kilcoyne, and K. M. Geib, “Selectively oxidised vertical cavity surface emitting lasers with 50% power conversion efficiency,” Electron. Lett., vol. 31, no. 3, pp. 208–209, 1995.
3. M. H. MacDougal, P. D. Dapkus, V. Pudikov, H. Zhao, and G. M. Yang, “Ultralow threshold current vertical-cavity surface-emitting lasers with AlAs oxide-GaAs distributed Bragg reflectors,” IEEE Photon. Technol. Lett., vol. 7, no. 3, pp. 229–231, 1995.
4. G. M. Yang, M. H. MacDougal, and P. D. Dapkus, “Ultralow threshold VCSEL's fabricated by selective oxidation from all epitaxial structure,” in Conf. Lasers Electro-Optics (CLEO), Bultimore, MD, May 22–26, 1995, postdeadline paper CPD4.
5. J. W. Scott, R. S. Geels, S. W. Corzine, and L. A. Coldren, “Modeling temperature effects and spatial hole burning to optimize verticalcavity surface-emitting laser performance,” IEEE J. Quantum Electron., vol. 29, no. 5, pp. 1295–1308, 1993.
6. D. V. Kuksenkov, H. Temkin, and S. Swirhun, “Measurement of internal quantum efficiency and losses in vertical cavity surface emitting lasers,” Appl. Phys. Lett., vol. 66, no. 14, pp. 1720–1722, 1995.
7. M. Born and E. Wolf, Principles of Optics. Oxford: Pergamon, 1994.
8. N. C. Frateschi, S. G. Hummel, and P. D. Dapkus, “In situ laser reflectometry applied to the growth of AL x Ga 1-x As Bragg reflectors by metalorganic chemical vapor deposition,” Electron. Lett., vol. 27, no. 2, p p. 155–157, 1991.
9. S. W. Corzine, R. S. Geels, J. W. Scott, R. H. Yan, and L. A. Coldren, “Design of Fabry-Perot surface-emitting lasers with a periodic gain structure,” IEEE J. Quantum Electron., vol. 25, no. 6, pp. 1513–1524, 1989.
10. D. I. Babic and S. W. Corzine, “Analytic expressions for the reflection delay, penetration depth, and absorptance of quarter-wave dielectric mirrors,” IEEE J. Quantum Electron., vol. 28, no. 2, pp. 514–524, 1992.
11. T. A. De Temple and C. M. Herzinger, “On the semiconductor laser logarithimic gain-current density relation,” IEEE J. Quantum Electron., vol, 29, no. 5, pp. 1246–1252, 1993.
12. H. Zhao, “The development of low threshold laser arrays and their applications in parallel optical datalinks,” Ph. D. Dissertation, University of Southern California, 1994.