Modeling of Chemical—Mechanical Polishing: A Review

IEEE Transactions on Semiconductor Manufacturing

Volumn 8, Issue 4, 1995, Pages 382-389

  Nanz, Gerd ^a   Camilletti, Lawrence E ^a  

^a HEWLETT PACKARD COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AGGLOMERATION; CHEMICAL POLISHING; FLOW OF SOLIDS; OXIDES; POLISHING MACHINES; POROSITY; SILICA; SILICON WAFERS; SLURRIES; SURFACES; WSI CIRCUITS;

ALKALINE SLURRY; CHEMICAL-MECHANICAL POLISHING; COLLOIDAL SILICA PARTICLES; FLOW OF SLURRY; LASER REFLOW; MECHANICAL ABRASIVE; PLANARIZATION; POLISHING PADS;

POLISHING;

EID: 0029409490     PISSN: 08946507     EISSN: 15582345     Source Type: Journal    
DOI: 10.1109/66.475179     Document Type: Article

References (23)

1. P. A. Burke, “Semi-empirical modeling of SiO2chemical-mechanical polishing planarization,” in Proc. VMIC Conf, 1991, pp. 379-384.
2. L. M. Cook, “Chemical processes in glass polishing,” J. Non-Crystalline Solids, vol. 120, pp. 152-171, 1990.
3. K. Girkmann, Flachentragwerke, (in German). Wien, Germany: Springer, 1959.
4. C. W. Kaanta, S. G. Bombardier, W. J. Cote, W. R. Hill, G. Kerzkowski, H. S. Landis, D. J. Poindexter, C. W. Pollard, G. H. Ross, J. G. Ryan, S. Wolff, and J. R. Cronin, “Dual damascene: A ULSI wiring technology,” in Proc. VMIC Conf., 1991, 144-152.
5. F. B. Kaufman, D. B. Thompson, R. E. Broadie, M. A. Jaso, W. L. Guthrie, D. J. Pearson, and M. B. Small, “Chemical-mechanical polishing for fabricating patterned W metal features as chip interconnects,” J. Electrochem. Soc., vol. 138, no. 11, 3460-3465, Nov. 1991.
6. R. Kolenkow and R. Nagahara, “Chemical-mechanical wafer polishing and planarization in batch systems,” Solid State Technol., pp. 112-114, June 1993
7. H. Lifka, W. Doedel, T. Souts, and P. H. Woerlee, “Chemical-mechanical polishing for planarization of advanced IC processes,” in ESSDERC, J. Borel, P. Gentil, J. P. Noblanc, A. Nouailhat, and M. Verdone, Eds. Gif-sur-Yvette Cédéx, France: Editions Frontieres, 1993, pp. 557-560.
8. W. J. Patrick, W. L. Guthrie, C. L. Standley, and P. M. Schiable, “Application of chemical-mechanical polishing to the fabrication of VLSI circuit interconnections,” J. Electrochem. Soc., vol. 138, no. 6, pp. 1778-1784, June 1991.
9. P. Renteln, M. E. Thomas, and J. M. Pierce, “Characterization of mechanical planarization processes,” in Proc. VMIC Conf., 1990, pp. 57-63.
10. S. R. Runnels, “Feature-scale fluid-based erosion modeling for chemical-mechanical polishing,” J. Electrochem. Soc., vol. 141, no. 7, pp. 1900-1904, July 1994.
11. S. R. Runnels and L. M. Eyman, “Tribology analysis of chemical- mechanical polishing,” J. Electrochem. Soc., vol. 141, no. 6, pp. 1698-1701, June 1994.
12. S. R. Runnels and P. Renteln, “Modeling the effect of polish pad deformation on wafer surface stress distributions during chemical-mechanical polishing,” Dielectric Sci. Technol., pp. 110-121, 1993.
13. “Chemical-mechanical polishing model in ATHENA,” in The Simulation Standard, SILVACO International, Sept. 1994.
14. P. H. Singer, “Searching for perfect planarity,” Semiconduct. Int., pp. 44-48, Mar. 1992.
15. “Chemical-mechanical polishing: A new focus on consumables,” Semiconduct. Int., Feb. 1994.
16. S. Sivaram, H. Bath, E. Lee, R. Leggett, and R. Tolies, “Measurement and modeling of pattern sensitivity during chemical-mechanical polishing of interlevel dielectrics,” SEMATECH, Austin, TX, Tech. Rep., 1992.
17. S. Sivaram, R. Tolies, H. Bath, E. Lee, and R. Leggett, “Chemical-mechanical polishing of interlevel dielectrics: Models for removal rate and planarity,” SEMATECH, Austin, TX, Tech. Rep.
18. J. M. Steigerwald, R. Zirpoli, S. P. Murarka, and R. J. Gutmann, “Pattern geometry effects in the chemical-mechanical polishing of inlaid copper structures,” J. Electrochem. Soc., vol. 142, no. 10, pp. 2841-2848, 1994.
19. S. M. Sze, VLSI Technology. New York: McGraw-Hill, 1988.
20. M. E. Thomas, S. Sekigahama, P. Renteln, and J. M. Pierce, “The mechanical planarization of interlevel dielectrics for multilevel interconnect applications,” in Proc. VMIC Conf, 1990, pp. 438-440.
21. S. P. Timoshenko and J. N. Goodier, Theory of Elasticity. New York: McGraw-Hill, 1984.
22. J. Warnock, “A two-dimensional process model for chemimechanical polish planarization,” J. Electrochem. Soc., vol. 138, no. 8, pp. 2398-2402, Aug. 1991.
23. T.-K. Yu, C. C. Yu, and M. Orlowski, “A statistical polishing pad model for chemical-mechanical polishing,” in IEDM Tech. Dig., 1993, pp. 865-868.