Fabrication and Performance of Selectively Oxidized Vertical-Cavity Lasers

IEEE Photonics Technology Letters

Volumn 7, Issue 11, 1995, Pages 1237-1239

  Choquette, Kent D ^a   Lear, K L ^a   Schneider, R P ^a   Geib, K M ^a   Figiel, J J ^a   Hull, Robert ^b  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b UNIVERSITY OF VIRGINIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; MASKS; METALLORGANIC VAPOR PHASE EPITAXY; MIRRORS; OXIDATION; OXIDES; REACTIVE ION ETCHING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS;

BURIED OXIDE CURRENT APERTURES; LINEAR OXIDATION RATES; MONOLITHIC DISTRIBUTED BRAGG REFLECTORS; NITRIDE MASK; POWER CONVERSION EFFICIENCY; THRESHOLD CURRENT; VERTICAL CAVITY SURFACE EMITTING LASERS; WAVELENGTH SPAN;

SEMICONDUCTOR LASERS;

EID: 0029408684     PISSN: 10411135     EISSN: 19410174     Source Type: Journal    
DOI: 10.1109/68.473457     Document Type: Article

References (16)

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