Epitaxial Lift-Off GaAs HEMT's

IEEE Transactions on Electron Devices

Volumn 42, Issue 11, 1995, Pages 1877-1881

  Shah, Divyang M ^a,b   Chan, Winston K ^a,c   Caneau, Catherine ^a   Gmitter, Thomas J ^a   Song, Jong In ^a   Hong, Brian P ^a   Micelh, Paul F ^a,d   De Rosa, Frank ^a  

^a TELCORDIA TECHNOLOGIES   (United States)

^b Anadigics Inc   (United States)

^c UNIVERSITY OF IOWA   (United States)

^d UNIVERSITY OF MISSOURI   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRON TRANSPORT PROPERTIES; EPITAXIAL GROWTH; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OHMIC CONTACTS; OXIDATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SILICA; TRANSCONDUCTANCE; X RAY DIFFRACTION;

CUT-OFF FREQUENCY; EPITAXIAL LIFT OFF; HALL MEASUREMENT SYSTEM; HIGH RESOLUTION X-RAY DIFFRACTION; ORGANO-METALLIC CHEMICAL VAPOR DEPOSITION; TWO DIMENSIONAL ELECTRON GAS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0029408490     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.469391     Document Type: Article

References (9)

1. W. K. Chan and A. Yi-Yan, “Grafted semiconductor optoelectronics,” IEEE J. Quantum Electron., vol. 27, pp. 717-725, 1991.
2. I. Polentier, L. Buydens, A. Ackaert, P. Demeester, P. Van Daele, F. Depestel, D. Lootens, and R. Baets, “Monolithic integration of an InGaAs/GaAs/AlGaAs strained layer SQW LED and GaAs MESFET using epitaxial lift-off,” Electron. Lett., vol. 26, pp. 925-926, 1990.
3. D. M. Shah, W. K. Chan, T. J. Gmitter, L. T. Florez, H. Schumacher, and B. P. Van der Gaag, “DC and RF performance of GaAs MESFET fabricated on silicon using epitaxial lift-off technique,” Electron. Lett., vol. 26, pp. 1865-1866, 1990.
4. C. Van Hoof, W. De Raedt, M. Van Rossum, and G. Borghs, “MESFET lift-off from GaAs substrate to glass host,” Electron. Lett., vol. 25, pp. 136-137, 1989.
5. D. R. Myers, J. F. Klem, and J. A. Lott, “AlGaAs/InGaAs strained-quantum-well FET's on silicon dioxide by selective device lift-off as an alternative to heteroepitaxy,” in Proc. Int. Electron Devices Meet. 1EDM 88, 1988, pp. 704-707.
6. E. Yablonovitch, T. Gmitter, J. Harbison, and R. Bhat, “Extreme selectivity in the lift-off of epitaxial GaAs films,” Appl. Phxs. Lett., vol. 51, pp. 2222-2224, 1987.
7. C. Weisbuch, “Fundamental properties of III-V semiconductor two-dimensional quantized structures: The basis for optical and electronic device applications,” in Semiconductors and Semimetals, R. Dingle, Ed., vol. 24, 1984.
8. W. K. Chan, T. S. Ravi, K. Kash, J. Christen, T. J. Gmitter, L. T. Florez, and J. P. Harbison, “Strain-induced localization in GaAs/AlGaAs quantum wells grafted onto nonplanar substrates,” Appl. Phxs. Lett., vol. 61, pp. 1319-1321, 1992.
9. D. M. Shah, “Investigation of epitaxial lift-off GaAs and Langmuir-Blodgett films for optoelectronic device applications,” Ph.D. dissertation, Dept. ECE, NJIT, Newark, NJ, 1992.