A critical review of ohmic and rectifying contacts for silicon carbide

Materials Science and Engineering B

Volumn 34, Issue 2-3, 1995, Pages 83-105

  Porter, Lisa M ^a   Davis, Robert F ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

Ohmic metal contacts; Rectifying metal contacts; Semiconductors; Silicon carbide

Indexed keywords

CHEMICAL REACTIONS; DEFECTS; DOPING (ADDITIVES); ELECTRIC BREAKDOWN; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC PROPERTIES; FERMI LEVEL; OHMIC CONTACTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; THERMODYNAMIC STABILITY;

CONTACT RESISTIVITY; IDEALITY FACTORS; METAL WORK FUNCTIONS; OHMIC CONTACT METALLIZATION; PARTIAL PINNING; RECTIFYING METAL CONTACTS; SCHOTTKY BARRIER HEIGHTS; SILICIDE;

SILICON CARBIDE;

EID: 0029406301     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/0921-5107(95)01276-1     Document Type: Review

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