Ka-Band Monolithic InGaAs/InP HBT VCO’s in CPW Structure

IEEE Microwave and Guided Wave Letters

Volumn 5, Issue 11, 1995, Pages 379-381

  Lin, J ^a   Chen, Y K ^a   Humphrey, D A ^a   Hamm, R A ^a   Malik, R J ^a   Tate, A ^a   Kopf, R F ^a   Ryan, R W ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; EFFICIENCY; ELECTRIC CURRENT MEASUREMENT; ELECTRIC LINES; ELECTROMAGNETIC WAVE PROPAGATION; FREQUENCIES; GATES (TRANSISTOR); HETEROJUNCTION BIPOLAR TRANSISTORS; SPURIOUS SIGNAL NOISE; WAVEGUIDES;

BASE COLLECTOR JUNCTION; CROSS OVER BRIDGES; EMITTER CURRENT; FREQUENCY TUNING RANGES; KA-BAND MONOLITHIC OSCILLATORS; OFFSET FREQUENCY; PHASE NOISE MEASUREMENT; TUNING VARACTOR;

VARIABLE FREQUENCY OSCILLATORS;

EID: 0029405893     PISSN: 10518207     EISSN: None     Source Type: Journal    
DOI: 10.1109/75.473536     Document Type: Article

References (6)

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3. M. Madihian and H. Takahashi, “A low-noise K-Ka band oscillator using AlGaAs/GaAs heterojunction bipolar transistors,” IEEE Trans. Microwave Theory Tech., vol. 39, no. 1, pp. 133-136, Jan. 1991.
4. H. Blanck, S. L. Delage, S. Cassette, E. Chartier, D. Floriot, M-A. Poisson, C. Brylinski, D. Pons, P. Roux, P. Bourne, and P. Quentin, “Fully monolithic Ku and Ka-band GalnP/GaAs HBT wideband VCO’s” in IEEE MTT-S Int. Microwave Symp. Dig., San Diego, CA, May 23-27, 1994, vol. 1, pp. 127-130.
5. K. Riepe, H. Leier, A. Marten, U. Giittich, J. M. Dieudonne, and K. H. Bachem, “30-40 GHz Monolithic VCO’s utilizing high-speed GalnP/GaAs HBT’s,” IEEE Microwave and Guided Wave Lett., vol. 4, no. 8, pp. 274-276, Aug. 1994.
6. K. W. Kobayashi, L. T. Tran, S. Bui, J. Velebir, D. Nguyen, A. K. Oki, and D. C. Streit, “InP based HBT millimeter-wave technology and circuit performance to 40 GHz,” in IEEE Microwave and Millimeter-Wave Monolithic Circuits Symp. Dig., 1993, pp. 85-88.