Application of the Back Gate in MOS Weak Inversion Translinear Circuits

IEEE Transactions on Circuits and Systems I: Fundamental Theory and Applications

Volumn 42, Issue 11, 1995, Pages 958-962

  Mulder, Jan ^a   van der Woerd, Albert C ^a   Serdijn, Wouter A ^a   van Roermund, Arthur H M ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; ELECTRIC CURRENT MEASUREMENT; ELECTRIC NETWORK TOPOLOGY; GATES (TRANSISTOR); MOSFET DEVICES;

LOW POWER APPLICATIONS; LOW VOLTAGE APPLICATIONS; TRANSLINEAR CIRCUITS;

LINEAR INTEGRATED CIRCUITS;

EID: 0029404107     PISSN: 10577122     EISSN: None     Source Type: Journal    
DOI: 10.1109/81.477207     Document Type: Article

References (5)

1. B. Gilbert, “Translinear circuits: A proposed classification,” Electron. Lett., vol. 11, pp. 14–16, Jan. 1975.
2. Y. P. Tsividis, Operation and Modeling of the MOS Transistor. New York: McGraw-Hill, 1987.
3. E. Vittoz and J. Fellrath, “CMOS analog integrated circuits based on weak inversion operation,” IEEE J. Solid-State Circuits, vol. SC-12, pp. 224–231, Mar. 1977.
4. E. Seevinck, Analysis and Synthesis of Translinear Integrated Circuits. New York: Elsevier, 1988.
5. M. V. D. Gevel and J. C. Kuenen, “Circuit based on a novel, back-gate-using multiplier,” Electron. Lett., vol. 30, pp. 183–184, Mar. 1994.