Metalorganic vapour phase epitaxy growth of ZnS layers by (t-Bu)SH and Me2Zn:Et3N precursors

Journal of Crystal Growth

Volumn 156, Issue 1-2, 1995, Pages 45-51

  Lovergine, N ^a   Longo, M ^a   Gerardi, C ^b   Manno, D ^a   Mancini, A M ^a   Vasanelli, L ^a,c  

^a INFM   (Italy)

^b Centro Nazionale per la Ricerca e lo Sviluppo dei Materiali   (Italy)

^c CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC PRESSURE; CRYSTAL ORIENTATION; INTERFACES (MATERIALS); PRESSURE EFFECTS; REACTION KINETICS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SINGLE CRYSTALS; SUBSTRATES; SURFACE ROUGHNESS; THERMAL EFFECTS; THERMODYNAMIC STABILITY;

PRECURSORS; ZINC SULFIDE/GALLIUM ARSENIDE HETEROINTERFACE;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0029403877     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00306-1     Document Type: Article

References (14)

1. Characterization of ZnS grown by metal-organic chemical vapour deposition on GaAs(100) using t-butyl mercaptan and dimethylzinc
2. MOCVD layer growth of ZnSe using a new zinc source
3. MOCVD Growth of ZnSxSe1-xEpitaxial Layers Lattice-Matched to GaAs Using Alkyls of Zn, S and Se
4. A new secondary ion mass spectrometry technique for III-V semiconductor compounds using the molecular ions CsM+