A Technique to Measure Trap Characteristics in CCD's Using X-rays

IEEE Transactions on Electron Devices

Volumn 42, Issue 11, 1995, Pages 1912-1917

  Gendreau, K C ^a   Prigozhia, G Y ^a   Huang, R K ^a   Bautz, M W ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRONS; IMAGING TECHNIQUES; MATHEMATICAL MODELS; RADIATION DAMAGE; SEMICONDUCTING SILICON; X RAY SPECTROSCOPY; X RAYS;

CHARGED TRANSFER EFFICIENCY; CHARGED TRANSFER INEFFICIENCY; MONOENERGETIC X-RAYS; PHOSPHORUS VACANCY TRAP CHARACTERISTICS; RADIATION INDUCED DEFECTS; X-RAY PHOTON INTERACTION;

CHARGE COUPLED DEVICES;

EID: 0029403418     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.469396     Document Type: Article

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