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Journal of Applied Physics

Volumn 78, Issue 7, 1995, Pages 4552-4559

Theoretical performance limits of 2.1-4.1 μm InAs/InGaSb, HgCdTe, and InGaAsSb lasers

(5) Flatte M E a Grein, C H b Ehrenreich, H a Miles, R H c Cruz, H a

a HARVARD UNIVERSITY (United States)

b UNIVERSITY OF ILLINOIS AT CHICAGO (United States)

c Hughes Aircraft Co (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; BAND STRUCTURE; BOUNDARY CONDITIONS; CALCULATIONS; CARRIER CONCENTRATION; CURRENT DENSITY; LIGHT ABSORPTION; MERCURY COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR SUPERLATTICES;

AUGER RECOMBINATION; INDIUM ARSENIDE; INDIUM GALLIUM ANTIMONIDE; INDIUM GALLIUM ARSENIC ANTIMONIDE; INFRARED LASERS; MERCURY CADMIUM TELLURIDE; MOMENTUM MATRIX ELEMENTS; RADIATIVE RECOMBINATION; WAVELENGTHS;

QUANTUM WELL LASERS;

EID: 0029394401 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.359798 Document Type: Article

Times cited : (75)

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