Non-Local Effects in pMOSFET Substrate Hot-Hole Injection Experiments

IEEE Electron Device Letters

Volumn 16, Issue 10, 1995, Pages 442-444

  Selmi, L ^a   Sangiorgi, E ^b   Bez, R ^c  

^a UNIVERSITY OF BOLOGNA   (Italy)

^b UNIVERSITY OF UDINE   (Italy)

^c STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT DENSITY; ELECTRIC FIELDS; HOT CARRIERS; MONTE CARLO METHODS; PROBABILITY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; SUBSTRATES;

HOLE INJECTION PROBABILITY; HOT HOLE INJECTION; LUCKY CARRIER MODEL PARAMETERS; NON LOCAL EFFECTS; WELL SUBSTRATE JUNCTION;

MOSFET DEVICES;

EID: 0029391708     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.464811     Document Type: Article

References (10)

1. W. Shockley, “Problems related to p-n junctions in silicon,” Solid-State Electronics, vol. 2, pp. 35–67, 1961.
2. T. H. Ning, C. M. Osburn, and H. N. Yu, “Emission probability of hot electrons from silicon into silicon dioxide,” J. Appl. Phys., vol. 48, pp. 286–293, 1977.
3. K. Hofmann, C. Werner, W. Weber, and G. Dorda “Hot-electron and hole-emission effects in short n-channel MOSFET's,” IEEE Trans. Electron Devices, vol. ED-32, p. 691, 1985.
4. A. V. Schwerin, M. M. Heyns, and W. Weber, “Investigation on the oxide field dependence of hole trapping and interface state generation in SiO 2 layers using homogeneous nonavalanche injection of holes,” J. Appl. Phys., vol. 67 p. 7595, 1990.
5. G. V. D. Bosch, G. Groeseneken, and H. Maes, “Critical analysis of the substrate hot-hole injection technique,” Solid-State Electron., vol. 37, p. 393, 1994.
6. L. Selmi, E. Sangiorgi, R. Bez, and B. Ricco, “Measurement of the hot-hole injection probability from Si into SiO 2 in pMOSFET‘s,” IEDM Tech. Dig., p. 333, 1993.
7. __, “A test chip and an accurate measurement system to characterize hot hole injection in the gate oxide of pMOSFET‘s,” ICMTS Tech. Dig., p. 68, 1993.
8. C. R. Crowell and S. M. Sze, “Temperature dependence of avalanch multiplication in semiconductors,” J. Appl. Phys., vol. 9, p. 242, 1966.
9. A. Abramo, F. Venturi, E. Sangiorgi, J. M. Higman, and B. Riccò “A numerical method to compute isotropic band models from anisotropic semiconductor band structures,” IEEE Trans. Computer-aided Design, vol. 12, no. 9, pp. 1327–1336, 1993.
10. A. Ghetti, L. Selmi, E. Sangiorgi, A. Abramo, and F. Venturi, “A combined transport-injection model for hot-electron and hot-hole injection in the gate oxide of MOS structures,” IEDM Tech. Dig., p. 363, 1994.