Modelling the temperature dependence of threshold current, external differential efficiency and lasing wavelength in QW laser diodes

Semiconductor Science and Technology

Volumn 10, Issue 10, 1995, Pages 1382-1392

  Menzel, U ^a   Barwolff A ^a   Enders, P ^a   Ackermann, D ^a   Puchert, R ^a   Voss, M ^a  

^a Max Born lnstitut ^*  (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFERENTIAL EFFICIENCY; LASING WAVELENGTH; RADIATIVE RECOMBINATION; THRESHOLD CURRENT;

CHARGE CARRIERS; COMPUTER SIMULATION; ELECTRIC CURRENTS; INTERFACES (MATERIALS); SEMICONDUCTOR DEVICE MODELS; THERMAL EFFECTS; THERMODYNAMIC PROPERTIES;

QUANTUM WELL LASERS;

EID: 0029390341     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/10/10/013     Document Type: Article

References (27)

1. Gain and intervalence band absorption in quantum-well lasers
2. Semiconducting and other major properties of gallium arsenide
3. A critical review of heterojunction band offsets
4. Optical analysis of multiple-quantum-well lasers
5. Anistropy and broadening of optical gain in a GaAs/AlGaAs multiquantum-well laser
6. Systematics of laser operation in GaAs/AlGaAs multiquantum well heterostructures