Fatigue-free SrBi2(TaxNb1-x)2O9 ferroelectric thin films

Materials Science and Engineering B

Volumn 34, Issue 1, 1995, Pages

  Desu, Seshu B ^a   Li, Tingkai ^a  

^a VIRGINIA POLYTECHNIC INSTITUTE AND STATE UNIVERSITY   (United States)

Author keywords

Bi layer structured oxide; Fatigue free; Ferroelectrics; Film deposition

Indexed keywords

COMPOSITION; DECOMPOSITION; ELECTRIC PROPERTIES; FATIGUE OF MATERIALS; FERROELECTRIC MATERIALS; LASER ABLATION; MICROSTRUCTURE; OXIDE SUPERCONDUCTORS; SOLID SOLUTIONS; SYNTHESIS (CHEMICAL);

BISMUTH LAYER-STRUCTURED-OXIDE; FATIGUE-FREE MATERIALS; FERROELECTRIC PROPERTIES; FILM DEPOSITION; METALLORGANIC DECOMPOSITION;

THIN FILMS;

EID: 0029389640     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/0921-5107(95)01232-X     Document Type: Article

References (14)

1. Integrated sol-gel PZT thin-films on Pt, Si, and GaAs for non-volatile memory applications
2. Ferroelectrics for nonvolatile RAMs
3. Recent results on switching, fatigue and electrical characterization of sol-gel based PZT capacitors
4. Oriented ferroelectric La-Sr-Co-O/Pb-La-Zr-Ti-O/La-Sr-Co-O heterostructures on [001] Pt/SiO2 Si substrates using a bismuth titanate template layer
5. Ferroelectricity in Mixed Bismuth Oxides with Layer-Type Structure