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Journal of Materials Science: Materials in Electronics

Volumn 6, Issue 5, 1995, Pages 311-324

SiGe band engineering for MOS, CMOS and quantum effect devices

(3) Wang, K L a Thomas, S G a Tanner, M O a

a UNIVERSITY OF CALIFORNIA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CMOS INTEGRATED CIRCUITS; EPITAXIAL GROWTH; FIELD EFFECT TRANSISTORS; MOS DEVICES; QUANTUM ELECTRONICS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR SUPERLATTICES; SILICON ON INSULATOR TECHNOLOGY;

BAND ENGINEERING; SILICON GERMANIUM HETEROSTRUCTURES; SILICON/GERMANIUM SUPERLATTICES;

HETEROJUNCTIONS;

EID: 0029388010 PISSN: 09574522 EISSN: 1573482X Source Type: Journal
DOI: 10.1007/BF00125886 Document Type: Article

Times cited : (58)

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