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Volumn 42, Issue 9, 1995, Pages 1697-1700

Opposite-Channel-Based Charge Injection in SOI MOSFET's Under Hot Carrier Stress

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; COMPUTER SIMULATION; COUPLED CIRCUITS; ELECTRIC CURRENTS; ELECTRIC DISCHARGES; ELECTRIC FIELDS; GATES (TRANSISTOR); HOT CARRIERS; SILICON ON INSULATOR TECHNOLOGY;

EID: 0029379446     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.405288     Document Type: Article
Times cited : (3)

References (13)
  • 2
    • 4243107146 scopus 로고
    • Current status of hot carrier effects in SOI MOSFET's
    • D. E. Ioannou, “Current status of hot carrier effects in SOI MOSFET's,” in Proc. IEEE Int. SOI Conf., 1994, pp. 1–2.
    • (1994) Proc. IEEE Int. SOI Conf. , pp. 1-2
    • Ioannou, D.E.1
  • 3
    • 0026987239 scopus 로고
    • Hot-electron-induced degradation of front and back channels in partially and fully depleted SIMOX MOSFET's
    • Dec.
    • S. Cristoloveanu, S. M. Gulwadi, D. E. Ioannou, G. J. Campisi, and H. L. Hughes, “Hot-electron-induced degradation of front and back channels in partially and fully depleted SIMOX MOSFET's,” IEEE Electron Device Lett., vol. 13, pp. 603–605, Dec. 1992.
    • (1992) IEEE Electron Device Lett. , vol.13 , pp. 603-605
    • Cristoloveanu, S.1    Gulwadi, S.M.2    Ioannou, D.E.3    Campisi, G.J.4    Hughes, H.L.5
  • 4
    • 0020830319 scopus 로고
    • Threshold voltage of thin-film silicon-on-insulator (SOI) MOSFET's
    • Oct.
    • H. K. Lim and J. G. Fossum, “Threshold voltage of thin-film silicon-on-insulator (SOI) MOSFET's,” IEEE Trans. Electron Devices, vol. ED-30, pp. 1244–1251, Oct. 1983.
    • (1983) IEEE Trans. Electron Devices , vol.ED-30 , pp. 1244-1251
    • Lim, H.K.1    Fossum, J.G.2
  • 6
    • 0027608848 scopus 로고
    • Surface potential at threshold in thin-film SOI MOSFET's
    • June
    • B. Mazhari and D. E. Ioannou, “Surface potential at threshold in thin-film SOI MOSFET's,” IEEE Trans. Electron Devices, vol. 40, pp. 1129–1133, June 1993.
    • (1993) IEEE Trans. Electron Devices , vol.40 , pp. 1129-1133
    • Mazhari, B.1    Ioannou, D.E.2
  • 7
    • 0027656743 scopus 로고
    • Successive charging/discharging of gate oxides in SOI MOSFET's by sequential hot-electron stressing of front/back channel
    • Sept.
    • A. Zaleski, D. E. Ioannou, G. J. Campisi, and H. L. Hughes, “Successive charging/discharging of gate oxides in SOI MOSFET's by sequential hot-electron stressing of front/back channel,” IEEE Electron Device Lett., vol. 14, pp. 435–437, Sept. 1993.
    • (1993) IEEE Electron Device Lett. , vol.14 , pp. 435-437
    • Zaleski, A.1    Ioannou, D.E.2    Campisi, G.J.3    Hughes, H.L.4
  • 9
    • 84919163082 scopus 로고
    • Generation and annihilation of interface states under alternate hot electron/hole injection in SOI MOSFET's
    • S. P. Sinha, A. Zaleski, D. E. Ioannou, G. J. Campisi, and H. L. Hughes, “Generation and annihilation of interface states under alternate hot electron/hole injection in SOI MOSFET's,” in Proc. IEEE Int. SOI Conf., 1994, pp. 123–124.
    • (1994) Proc. IEEE Int. SOI Conf. , pp. 123-124
    • Sinha, S.P.1    Zaleski, A.2    Ioannou, D.E.3    Campisi, G.J.4    Hughes, H.L.5
  • 13
    • 0021483045 scopus 로고
    • Lucky-electron model of channel hot-electron injection in MOSFET's
    • Sept.
    • S. Tam, P.-K. Ko, and C. Hu, “Lucky-electron model of channel hot-electron injection in MOSFET's,” IEEE Trans. Electron Devices, vol. ED-31, pp. 1116–1125, Sept. 1984.
    • (1984) IEEE Trans. Electron Devices , vol.ED-31 , pp. 1116-1125
    • Tam, S.1    Ko, P.-K.2    Hu, C.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.