Theoretical Analysis and Modeling of Submicron Channel Length DMOS Transistors

IEEE Transactions on Electron Devices

Volumn 42, Issue 9, 1995, Pages 1614-1622

  Hong, Merit Y ^a   Antoniadis, Dimitri A ^b  

^a MOTOROLA INC   (United States)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC FIELDS; FREQUENCY RESPONSE; GATES (TRANSISTOR); MOS DEVICES; NUMERICAL ANALYSIS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES;

CURRENT SATURATION; ELECTRON MOBILITY;

TRANSISTORS;

EID: 0029379418     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.405275     Document Type: Article

References (12)

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