Low temperature (≤600°C) polysilicon thin film transistors having in-situ doped polysilicon source and drain contacts

IEEE Electron Device Letters

Volumn 16, Issue 9, 1995, Pages 376-378

  Pichon, L ^a   Raoult, F ^a   Bonnaud, O ^a   Pinel, J ^a   Sarret, M ^a  

^a UNIVERSITÉ DE RENNES 1   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CHEMICAL VAPOR DEPOSITION; ELECTRIC PROPERTIES; GATES (TRANSISTOR); HYDROGENATION; IN SITU PROCESSING; OHMIC CONTACTS; PASSIVATION; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SILICA;

DRAIN CONTACTS; HIGH FIELD EFFECT MOBILITY; POLYSILICON; THRESHOLD VOLTAGE;

THIN FILM TRANSISTORS;

EID: 0029379244     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (14)