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Volumn 5, Issue 9, 1995, Pages 290-292

The Transmission-Line High-Efficiency Class-E Amplifier

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC IMPEDANCE; ELECTRIC LINES; ELECTRIC NETWORK ANALYSIS; ELECTRIC NETWORK TOPOLOGY; HARMONIC ANALYSIS; MESFET DEVICES; MICROSTRIP LINES;

EID: 0029378999     PISSN: 10518207     EISSN: None     Source Type: Journal    
DOI: 10.1109/75.410401     Document Type: Article
Times cited : (130)

References (7)
  • 1
    • 0016521160 scopus 로고
    • Class-E—A new class of high-efficiency tuned single-ended switching power amplifiers
    • June
    • N. A. Sokal and A. D. Sokal, “Class-E—A new class of high-efficiency tuned single-ended switching power amplifiers,” IEEE J. Solid-State Circuits, vol. 10, no. 3, pp. 168-176, June 1975.
    • (1975) IEEE J. Solid-State Circuits , vol.10 , Issue.3 , pp. 168-176
    • Sokal, N.A.1    Sokal, A.D.2
  • 2
    • 0022907087 scopus 로고
    • Idealized operation of class-E frequency multipliers
    • Dec.
    • R. E. Zulinski and J. W. Steadman, “Idealized operation of class-E frequency multipliers,” IEEE Trans. Circuits Syst., vol. CAS-33, no. 12, pp. 1209-1218, Dec. 1986.
    • (1986) IEEE Trans. Circuits Syst. , vol.CAS-33 , Issue.12 , pp. 1209-1218
    • Zulinski, R.E.1    Steadman, J.W.2
  • 3
    • 0027641763 scopus 로고
    • High-efficient class-F GaAs FET amplifiers operating with very low bias voltages for use in mobile telephones at 1.75 GHz
    • Aug.
    • C. Duvanaud, S. Dietsche, G. Pataut, and J. Obregon, “High-efficient class-F GaAs FET amplifiers operating with very low bias voltages for use in mobile telephones at 1.75 GHz,” IEEE Microwave and Guided Wave Lett., vol. 3, no. 8, pp. 268-271, Aug. 1993.
    • (1993) IEEE Microwave and Guided Wave Lett. , vol.3 , Issue.8 , pp. 268-271
    • Duvanaud, C.1    Dietsche, S.2    Pataut, G.3    Obregon, J.4
  • 4
    • 0027961724 scopus 로고
    • Microwave power performance of InP-based double heterojunction bipolar transistors for C- and X-band applications
    • M. Hafizi, P. A. Macdonald, T. Liu, and D. B. Rensch, “Microwave power performance of InP-based double heterojunction bipolar transistors for C- and X-band applications,” in 1994 IEEE MTT-S Int. Microwave Symp. Dig., pp. 268-271.
    • (1994) 1994 IEEE MTT-S Int. Microwave Symp. Dig. , pp. 268-271
    • Hafizi, M.1    Macdonald, P.A.2    Liu, T.3    Rensch, D.B.4
  • 5
    • 0017629837 scopus 로고
    • Idealized operation of the class-E tuned power amplifier
    • Dec.
    • F. H. Raab, “Idealized operation of the class-E tuned power amplifier,” IEEE Trans. Circuits Syst., vol. CAS-24, no. 12, pp. 725-735, Dec. 1977.
    • (1977) IEEE Trans. Circuits Syst. , vol.CAS-24 , Issue.12 , pp. 725-735
    • Raab, F.H.1
  • 6
    • 0012588854 scopus 로고
    • Quasi-optical class-E power amplifiers
    • Univ. of Colorado, Boulder, Aug.
    • T. B. Mader, ’’Quasi-optical class-E power amplifiers,” Ph.D. dissertation, Univ. of Colorado, Boulder, Aug. 1995.
    • (1995) Ph.D. dissertation
    • Mader, T.B.1
  • 7
    • 0003633989 scopus 로고
    • Suboptimum operation of class-E power amplifiers
    • Santa Clara, CA, Feb.
    • F. H. Raab, “Suboptimum operation of class-E power amplifiers,” in Proc. RF Technology Expo 89, Santa Clara, CA, Feb. 1989, pp. 85-98.
    • (1989) Proc. RF Technology Expo 89 , pp. 85-98
    • Raab, F.H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.