The Electrical Characteristics of Polysilicon Oxide Grown in Pure N2O

IEEE Electron Device Letters

Volumn 16, Issue 9, 1995, Pages 385-386

  Lai, Chao Sung ^a   Lei, Tan Fu ^a   Lee, Chung Len ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC PROPERTIES; ELECTRODES; LEAKAGE CURRENTS; NITROGEN OXIDES; OXIDES; POLYCRYSTALLINE MATERIALS; SEMICONDUCTOR GROWTH; THERMOOXIDATION;

CHARGE-TO-BREAKDOWN; ELECTRON TRAPPING; FOWLER-NORDHEIM STRESS; OXIDANT; POLYOXIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0029378967     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.406796     Document Type: Article

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