Studies on the butt-coupling of InGaAsP-waveguides realized with selective area metalorganic vapour phase epitaxy

Journal of Crystal Growth

Volumn 154, Issue 1-2, 1995, Pages 27-33

  Strzoda, R ^a   Ebbinghaus, G ^a   Scherg, T ^a   Emeis, N ^b  

^a SIEMENS AG   (Germany)

^b UNIVERSITY OF APPLIED SCIENCES OSNABRÜCK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ETCHING; GEOMETRY; HETEROJUNCTIONS; INTERFACES (MATERIALS); METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL PROPERTIES; SEMICONDUCTING INDIUM COMPOUNDS;

BUTT-COUPLING; LASER-WAVEGUIDE COUPLING; OPTICAL LOSS; SELECTIVE AREA METALORGANIC VAPOR PHASE EPITAXY;

WAVEGUIDES;

EID: 0029377929     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00184-0     Document Type: Article

References (8)

1. 22 GHz photodiode monolithically integrated with optical waveguide on semi-insulating InP using novel butt-joint structure