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Volumn 30, Issue 9, 1995, Pages 1006-1014

DRAM Macros for ASIC Chips

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; CELLULAR ARRAYS; CMOS INTEGRATED CIRCUITS; INTEGRATED CIRCUIT LAYOUT; LOGIC CIRCUITS; MACROS; RANDOM ACCESS STORAGE; SEMICONDUCTING SILICON; TRANSISTORS;

EID: 0029375722     PISSN: 00189200     EISSN: 1558173X     Source Type: Journal    
DOI: 10.1109/4.406409     Document Type: Article
Times cited : (20)

References (9)
  • 1
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    • A 32 b 66 MHz 1.8 W microprocessor
    • Feb.
    • R. Bechade et al., “A 32 b 66 MHz 1.8 W microprocessor,” Dig. Tech. Papers, ISSCC, Feb. 1994, pp. 208–209.
    • (1994) Dig. Tech. Papers, ISSCC , pp. 208-209
    • Bechade, R.1
  • 2
    • 84869410328 scopus 로고
    • A 72 k CMOS channelless gate aray with embedded 1 Mb dynamic RAM
    • May
    • K. Sawada et al., “A 72 k CMOS channelless gate aray with embedded 1 Mb dynamic RAM,” in IEEE CICC, Proc., May 1988,” pp. 20.3.1–20.3.4.
    • (1988) IEEE CICC, Proc. , pp. 20.3.1-20.3.4
    • Sawada, K.1
  • 3
    • 33747708646 scopus 로고
    • A system-integrated ULSI chip containing eleven 4 Mb DRAMs, six 64 kb SDRAMs and an 18 k gate array
    • Feb.
    • K. Sato et al., “A system-integrated ULSI chip containing eleven 4 Mb DRAMs, six 64 kb SDRAMs and an 18 k gate array,” Dig. Tech. Papers, ISSCC, Feb. 1992, pp. 52–53.
    • (1992) Dig. Tech. Papers, ISSCC , pp. 52-53
    • Sato, K.1
  • 4
    • 0027553564 scopus 로고
    • A 180 MHz 0.8 μm BiCMOS modular memory family of DRAM and multiport SRAM
    • Mar.
    • A. L. Silburt et al., “A 180 MHz 0.8 μm BiCMOS modular memory family of DRAM and multiport SRAM,” IEEE J. Solid-State Circuits, vol. 28, pp. 222–232, Mar. 1993.
    • (1993) IEEE J. Solid-State Circuits , vol.28 , pp. 222-232
    • Silburt, A.L.1
  • 5
    • 0342457329 scopus 로고
    • A substrate-plate trench-capacitor (SPT) memory cell for dynamic RAM's
    • Oct.
    • N. C. C. Lu et al., “A substrate-plate trench-capacitor (SPT) memory cell for dynamic RAM's,” IEEE J. Solid-State Circuits, vol. SC-21, pp. 627–634, Oct. 1986.
    • (1986) IEEE J. Solid-State Circuits , vol.SC-21 , pp. 627-634
    • Lu, N.C.C.1
  • 6
    • 0025505721 scopus 로고
    • A 50 ns 16 Mb DRAM with a 10 ns data rate and on-chip ECC
    • Oct.
    • H. L. Kalter et al., “A 50 ns 16 Mb DRAM with a 10 ns data rate and on-chip ECC,” IEEE J. Solid-State Circuit, vol. 25, pp. 1118–1129, Oct. 1990.
    • (1990) IEEE J. Solid-State Circuit , vol.25 , pp. 1118-1129
    • Kalter, H.L.1
  • 7
    • 0025665649 scopus 로고
    • A high performance 16 Mb DRAM technology
    • June
    • P. Bakeman et al., “A high performance 16 Mb DRAM technology,” Dig. Tech. Papers, Symp. VLSI Technol., June 1994, pp. 11–12.
    • (1994) Dig. Tech. Papers, Symp. VLSI Technol. , pp. 11-12
    • Bakeman, P.1
  • 8
    • 0344569449 scopus 로고
    • A 250 K-circuit ASIC family using a DRAM technology
    • May
    • M. D. Weir et al., “A 250 K-circuit ASIC family using a DRAM technology,” in IEEE CICC, Proc., May 1990, pp. 4. 6.1–4.6.5.
    • (1990) IEEE CICC, Proc. , pp. 4.6.1-4.6.5
    • Weir, M.D.1
  • 9
    • 84936901149 scopus 로고
    • A one-million-circuit CMOS ASIC logic family
    • May
    • R. Gregor et al., “A one-million-circuit CMOS ASIC logic family,” in IEEE CICC, Proc., May 1993, pp. 23. 1.1–23.1.4.
    • (1993) IEEE CICC, Proc. , pp. 23.1.1-23.1.4
    • Gregor, R.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.