Laser-Formed Metallic Connections Employing a Lateral Link Structure

IEEE Transactions on Components Packaging and Manufacturing Technology Part A

Volumn 18, Issue 3, 1995, Pages 690-692

  Bernstein, Joseph B ^a   Colella, Barry D ^b  

^a UNIVERSITY OF MARYLAND   (United States)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; ELECTRIC RESISTANCE; FOCUSING; LOGIC GATES; METALLIZING; NEODYMIUM LASERS; PULSED LASER APPLICATIONS; Q SWITCHING; SEMICONDUCTOR LASERS;

BEAM EXPANDER; CUSTOMIZATION; LASER FORMED METALLIC CONNECTIONS; METALLIZATION; PROGRAMMABLE GATE ARRAYS;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0029373904     PISSN: 10709886     EISSN: None     Source Type: Journal    
DOI: 10.1109/95.465171     Document Type: Article

References (2)

1. J. B. Bernstein, T. M. Ventura, and A. T. Radomski, “High density laser linking of metal interconnect,” IEEE Trans. Comp., Pkg., Manufact. Technol., vol. 17, pp. 590-593, 1994.
2. R. A. Lee, W. A. Moreno, D. Whittaker, J. Yoder, N. Saini, and A. Radomski, “Laser programmable interconnects for the quick turn around of electronic systems,” in Proc. Government Microcircuit Applications Conf., 1993, pp. 81-83.