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Volumn 338, Issue 1-3, 1995, Pages 143-156

Adsorption of water on Si(001)-2 × 1 and Si(111)-7 × 7 surfaces at 90 and 300 K: A Si 2p core-level and valence band study with synchrotron radiation

(6) Poncey, Christine a Rochet, François a Dufour, Georges a Roulet, Henri a Sirotti, Fausto b Panaccione, Giancarlo b

a SORBONNE UNIVERSITÉ (France)

b UNIVERSITÉ PARIS SACLAY (France)

Author keywords

Low index single crystal surfaces; Oxidation; Silicon; Soft X ray photoelectron spectroscopy; Surface chemical reaction; Water

Indexed keywords

CHEMICAL BONDS; CRYSTAL ORIENTATION; DISSOCIATION; ELECTRON ENERGY LEVELS; OXIDATION; REACTION KINETICS; SEMICONDUCTING SILICON; SINGLE CRYSTALS; SYNCHROTRON RADIATION; THERMAL EFFECTS; WATER; X RAY PHOTOELECTRON SPECTROSCOPY;

ADATOMS; DANGLING BONDS; LOW INDEX SINGLE CRYSTAL SURFACES; REST ATOMS; SURFACE CHEMICALS REACTION;

ADSORPTION;

EID: 0029373520 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/0039-6028(95)00501-3 Document Type: Article

Times cited : (51)

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