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Electronics Letters

Volumn 31, Issue 20, 1995, Pages 1779-1781

Insertion-loss-free 2×2 InGaAsP/InP optical switch fabricated using bandgap energy controlled selective MOVPE

(2) Hamamoto, K a Komatsu, K a

a NEC CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ENERGY GAP; LIGHT AMPLIFIERS; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL SWITCHES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR LASERS; WAVEGUIDES;

GATE INJECTION CURRENT; INSERTION LOSS; PASSIVE SPLITTER; SEMICONDUCTOR OPTICAL AMPLIFIERS;

INTEGRATED OPTOELECTRONICS;

EID: 0029370710 PISSN: 00135194 EISSN: None Source Type: Journal
DOI: 10.1049/el:19951178 Document Type: Article

Times cited : (20)

References (7)

1
- 0027647379
- Extremely low loss 4×4 GaAs/AlGaAs optical matrix switch
- HAMAMOTO, K., SUGOU, S., KOMATSU, K., and KITAMURA, M.: ‘Extremely low loss 4×4 GaAs/AlGaAs optical matrix switch’. Electron. Lett., 1993, 29, (17), pp. 1580-1581
- (1993) Electron. Lett. , vol.29 , Issue.17 , pp. 1580-1581
- HAMAMOTO, K.¹ SUGOU, S.² KOMATSU, K.³ KITAMURA, M.⁴

2
- 0026955206
- Monolithically integrated 4×4 InGaAsP/InP laser amplifier gate switch array
- GUSTAVSSON, M., LAGERSTROM, B., THYLEN, L., JANSON, M., LUNDGREN, L., MORNER, A.-C., RASK, M., and STALTZ, B,: ‘Monolithically integrated 4×4 InGaAsP/InP laser amplifier gate switch array’, Electron. Lett., 1992, 28, (24), pp. 2223-2225
- (1992) Electron. Lett. , vol.28 , Issue.24 , pp. 2223-2225
- GUSTAVSSON, M.¹ LAGERSTROM, B.² THYLEN, L.³ JANSON, M.⁴ LUNDGREN, L.⁵ MORNER, A.-C.⁶ RASK, M.⁷ STALTZ⁸

3
- 0026896992
- Integrated lossless InP/InGaAsP 1 to 4 optical switch
- DAVIES, D.A.O., MUDHAR, P.S., FISHER, M.A., MACE, D.A.H., and ADAMS, M.J.: ‘Integrated lossless InP/InGaAsP 1 to 4 optical switch’, Electron. Lett., 1992, 28, (16), pp. 1521-1522
- (1992) Electron. Lett. , vol.28 , Issue.16 , pp. 1521-1522
- DAVIES, D.A.O.¹ MUDHAR, P.S.² FISHER, M.A.³ MACE, D.A.H.⁴ ADAMS, M.J.⁵

4
- 0003510854
- Novel MQW DFB laser diode/modulator integrated light source using bandgap energy control epitaxial growth technique
- 17th ECOC Paris, France, Regular papers part 2
- KATO, T., SASAKI, T., KIDA, N., KOMATSU, K., and MITO, I.: ‘Novel MQW DFB laser diode/modulator integrated light source using bandgap energy control epitaxial growth technique’. 17th ECOC, 1991, Paris, France, Regular papers part 2, pp. 429-132
- (1991) , pp. 429-1132
- KATO, T.¹ SASAKI, T.² KIDA, N.³ KOMATSU, K.⁴ MITO, I.⁵

5
- 0027906407
- Selective metalorganic vapor phase epitaxial growth of InGaAsP/InP layers with bandgap energy control in InGaAs/InGaAsP multiple-quantum well structures
- SASAKI, T., KITAMURA, M., and MITO, I.: ‘Selective metalorganic vapor phase epitaxial growth of InGaAsP/InP layers with bandgap energy control in InGaAs/InGaAsP multiple-quantum well structures’, J. Cryst. Growth, 1993, 132, pp. 435-443
- (1993) J. Cryst. Growth , vol.132 , pp. 435-443
- SASAKI, T.¹ KITAMURA, M.² MITO, I.³

6
- 85024277070
- Insertion-loss-free optical switch fabricated using band-gap energy controlled selective MOVPE
- Tsukuba, Japan
- HAMAMOTO, K., and KOMATSU, K.: ‘Insertion-loss-free optical switch fabricated using band-gap energy controlled selective MOVPE’. Int. Workshop on Metastable and Strained Semiconductors, Tsukuba, Japan, 1994, Vol. LN-1, pp. 1-2
- (1994) Int. Workshop on Metastable and Strained Semiconductors , vol.LN-1 , pp. 1-2
- HAMAMOTO, K.¹ KOMATSU, K.²

7
- 0028378678
- Polarization-insensitive semiconductor optical amplifier array grown by selective MOVPE
- KITAMURA, S., KOMATSU, K., and KITAMURA, M.: ‘Polarization-insensitive semiconductor optical amplifier array grown by selective MOVPE’, IEEE Photonics Technol. Lett., 1994, 6, pp. 173-175
- (1994) IEEE Photonics Technol. Lett. , vol.6 , pp. 173-175
- KITAMURA, S.¹ KOMATSU, K.² KITAMURA, M.³

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