-
1
-
-
0019020915
-
A MESFET model for use in the design of GaAs integrated circuits
-
W. R. Curtice, “A MESFET model for use in the design of GaAs integrated circuits,” IEEE Trans. Microwave Theory Tech., vol. MTT-28, pp. 448–456, 1980.
-
(1980)
IEEE Trans. Microwave Theory Tech.
, vol.MTT-28
, pp. 448-456
-
-
Curtice, W.R.1
-
2
-
-
0023292335
-
GaAs FET device and circuit simulation in SPICE
-
H. Statz, P. Newman, I. W. Smith, R. A. Pucel, and H. A. Haus, “GaAs FET device and circuit simulation in SPICE,” IEEE Trans. Electron Devices, vol. ED-34, pp. 160–169, 1987.
-
(1987)
IEEE Trans. Electron Devices
, vol.ED-34
, pp. 160-169
-
-
Statz, H.1
Newman, P.2
Smith, I.W.3
Pucel, R.A.4
Haus, H.A.5
-
3
-
-
0024646121
-
An accurate MESFET model for linear and microwave circuit design
-
Feb.
-
N. Schinberg, R. Bayruns, P. Wallace, and R. Goyal, “An accurate MESFET model for linear and microwave circuit design,” IEEE J. Solid-State Circuits, vol. 24, no. 2, pp. 532–539, Feb. 1989.
-
(1989)
IEEE J. Solid-State Circuits
, vol.24
, Issue.2
, pp. 532-539
-
-
Schinberg, N.1
Bayruns, R.2
Wallace, P.3
Goyal, R.4
-
4
-
-
0020735515
-
Compact DC model of GaAs FETs for large signal computer calculations
-
T. Kacprzak and A. Materka, “Compact DC model of GaAs FETs for large signal computer calculations,” IEEE J. Solid-State Circuits, vol. SC-18, pp. 211–213, 1983.
-
(1983)
IEEE J. Solid-State Circuits
, vol.SC-18
, pp. 211-213
-
-
Kacprzak, T.1
Materka, A.2
-
5
-
-
0025445425
-
An improved GaAs MESFET model for SPICE
-
June
-
A. J. McCamant, G. D. McCormack, and D. H. Smith, “An improved GaAs MESFET model for SPICE,” IEEE Trans. Microwave Theory Tech., vol. 38, no. 6, pp. 822–824, June 1990.
-
(1990)
IEEE Trans. Microwave Theory Tech.
, vol.38
, Issue.6
, pp. 822-824
-
-
McCamant, A.J.1
McCormack, G.D.2
Smith, D.H.3
-
6
-
-
6044235223
-
A highly accurate microwave nonlinear MESFET model
-
May
-
J. Rodriguez-Tellez, K. A. Mezher, O. M. Conde Portilla, and J. C. Luengo Patrocinio, “A highly accurate microwave nonlinear MESFET model,” Microwave J., pp. 280–285, May 1993.
-
(1993)
Microwave J.
, pp. 280-285
-
-
Rodriguez-Tellez, J.1
Mezher, K.A.2
Conde Portilla, O.M.3
Luengo Patrocinio, J.C.4
-
7
-
-
0026395570
-
“Technology independent non quasi-static FET models by direct construction from automatically characterized device data
-
Stuttgart, Germany Sept.
-
D. E. Root, S. Fan, and J. Meyer, “Technology independent non quasi-static FET models by direct construction from automatically characterized device data,” in 21st European Microwave Conf. Proc., Stuttgart, Germany, Sept. 1991, pp. 927–932.
-
(1991)
21st European Microwave Conf. Proc.
, pp. 927-932
-
-
Root, D.E.1
Fan, S.2
Meyer, J.3
-
8
-
-
0026888767
-
A nonlinear integral model of electron devices for harmonic balance circuit analysis
-
F. Filicori et al., “A nonlinear integral model of electron devices for harmonic balance circuit analysis,” IEEE Trans. Microwave Theory Tech., vol. 40, pp. 1456–1465, 1992.
-
(1992)
IEEE Trans. Microwave Theory Tech.
, vol.40
, pp. 1456-1465
-
-
Filicori, F.1
-
9
-
-
0023999560
-
A low-frequency GaAs MESFET circuit model
-
Apr.
-
N. Scheinberg, R. Bayruns, and R. Goyal, “A low-frequency GaAs MESFET circuit model,” IEEE J. Solid-State Circuits, vol. 23, no. 2, pp. 605–608, Apr. 1988.
-
(1988)
IEEE J. Solid-State Circuits
, vol.23
, Issue.2
, pp. 605-608
-
-
Scheinberg, N.1
Bayruns, R.2
Goyal, R.3
-
10
-
-
0003915801
-
-
Electron. Res. Lab., Univ. California, Berkeley, ERL Memo No. ERL-M520, May
-
L. W. Nagel, “SPICE2: A computer program to simulate semiconductor circuits,” Electron. Res. Lab., Univ. California, Berkeley, ERL Memo No. ERL-M520, May 1975.
-
(1975)
SPICE2: A computer program to simulate semiconductor circuits
-
-
Nagel, L.W.1
-
11
-
-
0026170767
-
Numerical small signal AC modeling of deep-level trap related frequency-dependent output conductance and capacitance for GaAs MESFET's on semi-insulating substrates
-
June
-
Q. Li and R. W. Dutton, “Numerical small signal AC modeling of deep-level trap related frequency-dependent output conductance and capacitance for GaAs MESFET's on semi-insulating substrates,” IEEE Trans. Electron. Lett., vol. 38, no. 6, pp. 1285–1288, June 1991.
-
(1991)
IEEE Trans. Electron. Lett.
, vol.38
, Issue.6
, pp. 1285-1288
-
-
Li, Q.1
Dutton, R.W.2
-
13
-
-
0026237757
-
A capacitance model for GaAs MESFET's
-
Oct.
-
N. Scheinberg and E. Chisholm, “A capacitance model for GaAs MESFET's,” IEEE J. Solid-State Circuits, vol. 26, no. 10, pp. 1467–1470, Oct. 1991.
-
(1991)
IEEE J. Solid-State Circuits
, vol.26
, Issue.10
, pp. 1467-1470
-
-
Scheinberg, N.1
Chisholm, E.2
-
14
-
-
0026881708
-
Experimental evaluation of large-signal modeling assumptions based on vector analysis of bias-dependent S-parameter data from MESFETs and HEMTs
-
D. E. Root and S. Fan, “Experimental evaluation of large-signal modeling assumptions based on vector analysis of bias-dependent S-parameter data from MESFETs and HEMTs,” in IEEE MTT-S Int. Microwave Symp. Tech. Dig., 1992, pp. 255–259.
-
(1992)
IEEE MTT-S Int. Microwave Symp. Tech. Dig.
, pp. 255-259
-
-
Root, D.E.1
Fan, S.2
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