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Volumn 30, Issue 8, 1995, Pages 872-880

An Independently Matched Parameter SPICE Model for GaAs MESFET's

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; COMPUTER SOFTWARE; ELECTRIC CURRENT MEASUREMENT; ELECTRIC NETWORK ANALYSIS; INTEGRATION; MATHEMATICAL TRANSFORMATIONS; MATRIX ALGEBRA; MESFET DEVICES; NONLINEAR NETWORK ANALYSIS; SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0029359634     PISSN: 00189200     EISSN: 1558173X     Source Type: Journal    
DOI: 10.1109/4.400429     Document Type: Article
Times cited : (2)

References (14)
  • 1
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  • 3
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    • Feb.
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    • Schinberg, N.1    Bayruns, R.2    Wallace, P.3    Goyal, R.4
  • 4
    • 0020735515 scopus 로고
    • Compact DC model of GaAs FETs for large signal computer calculations
    • T. Kacprzak and A. Materka, “Compact DC model of GaAs FETs for large signal computer calculations,” IEEE J. Solid-State Circuits, vol. SC-18, pp. 211–213, 1983.
    • (1983) IEEE J. Solid-State Circuits , vol.SC-18 , pp. 211-213
    • Kacprzak, T.1    Materka, A.2
  • 7
    • 0026395570 scopus 로고
    • “Technology independent non quasi-static FET models by direct construction from automatically characterized device data
    • Stuttgart, Germany Sept.
    • D. E. Root, S. Fan, and J. Meyer, “Technology independent non quasi-static FET models by direct construction from automatically characterized device data,” in 21st European Microwave Conf. Proc., Stuttgart, Germany, Sept. 1991, pp. 927–932.
    • (1991) 21st European Microwave Conf. Proc. , pp. 927-932
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  • 8
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    • F. Filicori et al., “A nonlinear integral model of electron devices for harmonic balance circuit analysis,” IEEE Trans. Microwave Theory Tech., vol. 40, pp. 1456–1465, 1992.
    • (1992) IEEE Trans. Microwave Theory Tech. , vol.40 , pp. 1456-1465
    • Filicori, F.1
  • 9
    • 0023999560 scopus 로고
    • A low-frequency GaAs MESFET circuit model
    • Apr.
    • N. Scheinberg, R. Bayruns, and R. Goyal, “A low-frequency GaAs MESFET circuit model,” IEEE J. Solid-State Circuits, vol. 23, no. 2, pp. 605–608, Apr. 1988.
    • (1988) IEEE J. Solid-State Circuits , vol.23 , Issue.2 , pp. 605-608
    • Scheinberg, N.1    Bayruns, R.2    Goyal, R.3
  • 11
    • 0026170767 scopus 로고
    • Numerical small signal AC modeling of deep-level trap related frequency-dependent output conductance and capacitance for GaAs MESFET's on semi-insulating substrates
    • June
    • Q. Li and R. W. Dutton, “Numerical small signal AC modeling of deep-level trap related frequency-dependent output conductance and capacitance for GaAs MESFET's on semi-insulating substrates,” IEEE Trans. Electron. Lett., vol. 38, no. 6, pp. 1285–1288, June 1991.
    • (1991) IEEE Trans. Electron. Lett. , vol.38 , Issue.6 , pp. 1285-1288
    • Li, Q.1    Dutton, R.W.2
  • 13
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    • A capacitance model for GaAs MESFET's
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    • N. Scheinberg and E. Chisholm, “A capacitance model for GaAs MESFET's,” IEEE J. Solid-State Circuits, vol. 26, no. 10, pp. 1467–1470, Oct. 1991.
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    • Scheinberg, N.1    Chisholm, E.2
  • 14
    • 0026881708 scopus 로고
    • Experimental evaluation of large-signal modeling assumptions based on vector analysis of bias-dependent S-parameter data from MESFETs and HEMTs
    • D. E. Root and S. Fan, “Experimental evaluation of large-signal modeling assumptions based on vector analysis of bias-dependent S-parameter data from MESFETs and HEMTs,” in IEEE MTT-S Int. Microwave Symp. Tech. Dig., 1992, pp. 255–259.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.